Alle MOSFET. RHU003N03 Datenblatt

 

RHU003N03 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: RHU003N03

Markierungscode: MN

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 0.2 W

Maximale Drain-Source-Spannung (Vds): 30 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 0.3 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 2.5 V

Anstiegszeit (tr): 6 nS

Drain-Kapazität (Cd): 13 pF

Ausgangswiderstand RDS(on): 1.2 Ohm

Transistorgehäuse: UMT3

Ersatz (vergleichstyp) für RHU003N03 Transistor

 

RHU003N03 Datasheet (PDF)

1.1. rhu003n03.pdf Size:48K _update_mosfet

RHU003N03
RHU003N03

RHU003N03 Transistors 4V Drive Nch MOS FET RHU003N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) 4V drive. (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol : MN (3) Drain Packaging specifications Inn

1.2. rhu003n03fra.pdf Size:911K _update_mosfet

RHU003N03
RHU003N03

RHU003N03FRA RHU003N03 Transistors AEC-Q101 Qualified 4V Drive Nch MOS FET RHU003N03FRA RHU003N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) 4V drive. (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol : MN

 5.1. rhu002n06fra.pdf Size:1034K _update_mosfet

RHU003N03
RHU003N03

AEC-Q101 Qualified 4V Drive Nch MOSFET RHU002N06FRA Structure Dimensions (Unit : mm) Silicon N-channel UMT3 MOSFET transistor 2.0 0.9 0.3 0.2 0.7 (3) Features 1) Low on-resistance. (2) (1) 2) High ESD. 0.65 0.65 3) High-speed switching. 0.15 1.3 4) Low-voltage drive (4V). (1) Source Each lead has same dimensions 5) Drive circuits can be simple. (2) Gate Abb

5.2. rhu002n06.pdf Size:60K _update_mosfet

RHU003N03
RHU003N03

RHU002N06 Transistors Switching (60V, 200mA) RHU002N06 External dimensions (Unit : mm) Features 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 1.25 5) Easily designed drive circuits. 2.1 6) Easy to use in parallel. 0.1Min. Each lead has same dimensions Structure Silicon N-channel Abbreviated symbol : KP MOSFET transisto

Anderen MOSFET... RHK003N06FRA , RHK003N06T146 , RHK005N03FRA , RHK005N03T146 , RHP020N06T100 , RHP030N03T100 , RHU002N06 , RHU002N06FRA , IRFP250N , RHU003N03FRA , RJJ0601JPE , RJJ0601JPN , RJK005N03FRA , RJK005N03T146 , RJK0323JPD , RJK0329DPB-00 , RJK0329DPB-01 .

 
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