Alle MOSFET. SSP4N60AS Datenblatt

 

SSP4N60AS MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: SSP4N60AS

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 100 W

Maximale Drain-Source-Spannung (Vds): 600 V

Maximaler Drainstrom (Id): 4 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Drain-Kapazität (Cd): 545 pF

Ausgangswiderstand (Rds): 2.5 Ohm

Transistorgehäuse: TO220

Ersatz (vergleichstyp) für SSP4N60AS Transistor

 

SSP4N60AS Datasheet (PDF)

1.1. ssp4n60as.pdf Size:912K _samsung

SSP4N60AS
SSP4N60AS

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

5.1. ssp4n90a.pdf Size:552K _samsung

SSP4N60AS
SSP4N60AS

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 5.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.181 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

5.2. ssp4n90as.pdf Size:206K _samsung

SSP4N60AS
SSP4N60AS

SSP4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 3.054 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteri

5.3. ssp4n80as.pdf Size:208K _samsung

SSP4N60AS
SSP4N60AS

SSP4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 2.450 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteri

5.4. ssp4n80a.pdf Size:860K _samsung

SSP4N60AS
SSP4N60AS

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.400 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

Anderen MOSFET... SSP2N90A , SSP3N70 , SSP3N70A , SSP3N80A , SSP3N90A , SSP45N20A , SSP4N55 , SSP4N60 , APT50M38JLL , SSP4N70 , SSP4N70A , SSP4N80A , SSP4N80AS , SSP4N90A , SSP4N90AS , SSP5N80A , SSP5N90A .

 


SSP4N60AS
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SSP4N60AS
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