Alle MOSFET. SSW1N60A Datenblatt

 

SSW1N60A MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: SSW1N60A

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 34 W

Maximale Drain-Source-Spannung (Vds): 600 V

Maximaler Drainstrom (Id): 1 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Drain-Kapazität (Cd): 145 pF

Ausgangswiderstand (Rds): 12 Ohm

Transistorgehäuse: TO263

Ersatz (vergleichstyp) für SSW1N60A Transistor

 

SSW1N60A Datasheet (PDF)

1.1. ssw1n60a.pdf Size:503K _samsung

SSW1N60A
SSW1N60A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 12 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V 2 Low RDS(ON) : 9.390 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

5.1. ssw1n50a.pdf Size:503K _samsung

SSW1N60A
SSW1N60A

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology ? RDS(on) = 5.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V 2 Lower RDS(ON) : 4.046 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteri

Anderen MOSFET... SSS80N06A , SSU1N50 , SSU1N50A , SSU1N60A , SSU2N60A , SSU3055A , SSU3055LA , SSW1N50A , CEP83A3 , SSW2N60A , SSW2N80A , SSW2N90A , SSW3N80A , SSW3N90A , SSW4N60A , SSW4N80A , SSW4N80AS .

 


SSW1N60A
  SSW1N60A
  SSW1N60A
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SSW1N60A
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  SSW1N60A
 

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