Alle MOSFET. FDMS86105 Datenblatt

 

FDMS86105 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: FDMS86105

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 48 W

Maximale Drain-Source-Spannung (Vds): 100 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 56 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Ausgangswiderstand (Rds): 0.034 Ohm

Transistorgehäuse: POWER56

Ersatz (vergleichstyp) für FDMS86105 Transistor

 

FDMS86105 Datasheet (PDF)

1.1. fdms86105.pdf Size:266K _fairchild_semi

FDMS86105
FDMS86105

January 2011 FDMS86105 N-Channel PowerTrench MOSFET 100 V, 26 A, 34 m? Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 34 m? at VGS = 10 V, ID = 6 A Semiconductors advanced Power Trench process that has Max rDS(on) = 54 m? at VGS = 6 V, ID = 4.5 A been especially tailored to minimize the on-state resistance and yet maintain superior sw

2.1. fdms86104.pdf Size:296K _fairchild_semi

FDMS86105
FDMS86105

July 2010 FDMS86104 N-Channel PowerTrench MOSFET 100 V, 16 A, 24 m? Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 24 m? at VGS = 10 V, ID = 7 A Semiconductors advanced Power Trench process thant has Max rDS(on) = 39 m? at VGS = 6 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and Advanced Package and Sil

2.2. fdms86101dc.pdf Size:407K _fairchild_semi

FDMS86105
FDMS86105

July 2013 FDMS86101DC N-Channel Dual CoolTM Shielded Gate PowerTrench® MOSFET 100 V, 60 A, 7.5 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that Dual CoolTM Top Side Cooling PQFN package incorporates Shielded Gate technology. Advancements in both Max rDS(on) = 7.5

2.3. fdms86101a.pdf Size:317K _fairchild_semi

FDMS86105
FDMS86105

October 2014 FDMS86101A N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor‘s advanced PowerTrench® process that Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A incorporates Shielded Gate technology. This process has been optimized for the on-stat

2.4. fdms86101.pdf Size:278K _fairchild_semi

FDMS86105
FDMS86105

October 2010 FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 m? Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8 m? at VGS = 10 V, ID = 13 A Semiconductors advanced Power Trench process thant has Max rDS(on) = 13.5 m? at VGS = 6 V, ID = 9.5 A been especially tailored to minimize the on-state resistance and Advanced Package and

2.5. fdms86103l.pdf Size:262K _fairchild_semi

FDMS86105
FDMS86105

December 2010 FDMS86103L N-Channel PowerTrench MOSFET 100 V, 49 A, 8 m? Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8 m? at VGS = 10 V, ID = 12 A Semiconductors advanced Power Trench process thant has Max rDS(on) = 11 m? at VGS = 4.5 V, ID = 10 A been especially tailored to minimize the on-state resistance and Advanced Package an

2.6. fdms86102lz.pdf Size:317K _fairchild_semi

FDMS86105
FDMS86105

May 2011 FDMS86102LZ N-Channel Power Trench® MOSFET 100 V, 22 A, 25 mΩ Features General Description Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench® process Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A that has been special tailored to minimize the on-state HBM ESD protection

Anderen MOSFET... FDMS86101 , STM6708 , FDMS86102LZ , STM6610 , FDMS86103L , STM6375 , FDMS86104 , STM4973 , J111 , STM4953 , FDMS86200 , FDMS86201 , FDMS8622 , STM4952 , FDMS86252 , FDMS86300 , FDMS86322 .

 


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