Alle MOSFET. FDS5351 Datenblatt

 

FDS5351 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: FDS5351

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 5 W

Maximale Drain-Source-Spannung (Vds): 60 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 6.1 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Ausgangswiderstand (Rds): 0.035 Ohm

Transistorgehäuse: SOIC

Ersatz (vergleichstyp) für FDS5351 Transistor

 

FDS5351 Datasheet (PDF)

1.1. fds5351.pdf Size:237K _fairchild_semi

FDS5351
FDS5351

April 2008 FDS5351 N-Channel PowerTrench MOSFET 60V, 6.1A, 35m? Features General Description Max rDS(on) = 35m? at VGS = 10V, ID = 6.1A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 42m? at VGS = 4.5V, ID = 5.5A been especially tailored to minimize the on-state resistance and High performance trench technolo

Anderen MOSFET... FDS4675_F085 , FDS4685 , FDS4897AC , STB434S , FDS4897C , STB432S , FDS4935A , FDS4935BZ , BUZ90A , FDS5670 , FDS5672 , FDS6294 , STB416D , FDS6298 , STB31L01 , FDS6574A , FDS6670AS .

 


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