Alle MOSFET. FQD5N20L Datenblatt

 

FQD5N20L MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQD5N20L

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 37 W

Maximale Drain-Source-Spannung (Vds): 200 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 3.8 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Ausgangswiderstand RDS(on): 1.2 Ohm

Transistorgehäuse: TO252_DPAK

Ersatz (vergleichstyp) für FQD5N20L Transistor

 

FQD5N20L Datasheet (PDF)

1.1. fqd5n20ltf fqd5n20ltm.pdf Size:618K _fairchild_semi

FQD5N20L
FQD5N20L

October 2008 QFET® FQD5N20L / FQU5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.8A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology is especia

1.2. fqd5n20l fqu5n20l.pdf Size:618K _fairchild_semi

FQD5N20L
FQD5N20L

October 2008 QFET FQD5N20L / FQU5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology is especially tailored t

 3.1. fqd5n20 fqu5n20.pdf Size:695K _fairchild_semi

FQD5N20L
FQD5N20L

April 2000 TM QFET QFET QFET QFET FQD5N20 / FQU5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been esp

3.2. fqd5n20tf.pdf Size:690K _fairchild_semi

FQD5N20L
FQD5N20L

April 2000 TM QFET QFET QFET QFET FQD5N20 / FQU5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.8A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology

Anderen MOSFET... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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