Alle MOSFET. FQI7N80 Datenblatt

 

FQI7N80 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQI7N80

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 167 W

Maximale Drain-Source-Spannung (Vds): 800 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 6.6 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Ladung (Qg): 40 nC

Ausgangswiderstand RDS(on): 1.5 Ohm

Transistorgehäuse: TO262_I2PAK

Ersatz (vergleichstyp) für FQI7N80 Transistor

 

FQI7N80 Datasheet (PDF)

1.1. fqi7n80tu.pdf Size:836K _fairchild_semi

FQI7N80
FQI7N80

October 2008 QFET® FQB7N80 / FQI7N80 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 6.6A, 800V, RDS(on) = 1.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 19 pF) This advanced technology has been especially

1.2. fqi7n80 fqb7n80.pdf Size:836K _fairchild_semi

FQI7N80
FQI7N80

October 2008 QFET FQB7N80 / FQI7N80 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 19 pF) This advanced technology has been especially tailored to

 5.1. fqi7n10tu.pdf Size:546K _fairchild_semi

FQI7N80
FQI7N80

December 2000 TM QFET QFET QFET QFET FQB7N10 / FQI7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 10 pF) This advanced technolo

5.2. fqi7n10ltu.pdf Size:554K _fairchild_semi

FQI7N80
FQI7N80

December 2000 TM QFET QFET QFET QFET FQB7N10L / FQI7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced

 5.3. fqi7n60tu.pdf Size:651K _fairchild_semi

FQI7N80
FQI7N80

October 2008 QFET® FQB7N60 / FQI7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.4A, 600V, RDS(on) = 1.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 29 nC) planar stripe, DMOS technology. • Low Crss ( typical 16 pF) This advanced technology has been especially

5.4. fqb7n60 fqi7n60.pdf Size:651K _fairchild_semi

FQI7N80
FQI7N80

October 2008 QFET FQB7N60 / FQI7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been especially tailored to

Anderen MOSFET... FQI4N80 , IRFW630B , FQI4N90 , FQI50N06 , FQI5N60C , IRF644B , FQI7N60 , IRF634B , IRFP250 , FDC6392S , FQI8N60C , FDP047AN08A0 , FQL40N50 , FQL40N50F , FQN1N50C , FQN1N60C , FDP3652 .

 
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