Alle MOSFET. FQI8N60C Datenblatt

 

FQI8N60C MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQI8N60C

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 147 W

Maximale Drain-Source-Spannung (Vds): 600 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 7.5 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Ladung (Qg): 28 nC

Ausgangswiderstand RDS(on): 1.2 Ohm

Transistorgehäuse: TO262_I2PAK

Ersatz (vergleichstyp) für FQI8N60C Transistor

 

FQI8N60C Datasheet (PDF)

1.1. fqb8n60c fqi8n60c.pdf Size:965K _fairchild_semi

FQI8N60C
FQI8N60C

October 2008 QFET FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

1.2. fqi8n60ctu.pdf Size:965K _fairchild_semi

FQI8N60C
FQI8N60C

October 2008 QFET® FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology has been especiall

 

Anderen MOSFET... FQI4N90 , FQI50N06 , FQI5N60C , IRF644B , FQI7N60 , IRF634B , FQI7N80 , FDC6392S , RFP50N06 , FDP047AN08A0 , FQL40N50 , FQL40N50F , FQN1N50C , FQN1N60C , FDP3652 , FQNL2N50B , FQP10N20C .

 
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