Alle MOSFET. FQL40N50F Datenblatt

 

FQL40N50F MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQL40N50F

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 460 W

Maximale Drain-Source-Spannung (Vds): 500 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 40 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 5 V

Gate-Ladung (Qg): 155 nC

Ausgangswiderstand RDS(on): 0.11 Ohm

Transistorgehäuse: TO264

Ersatz (vergleichstyp) für FQL40N50F Transistor

 

FQL40N50F Datasheet (PDF)

1.1. fql40n50f.pdf Size:673K _fairchild_semi

FQL40N50F
FQL40N50F

September 2001 TM FRFET FQL40N50F 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 40A, 500V, RDS(on) = 0.11? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 155 nC) planar stripe, DMOS technology. Low Crss ( typical 95 pF) This advanced technology has been especially tailored to

2.1. fql40n50.pdf Size:623K _fairchild_semi

FQL40N50F
FQL40N50F

May 2001 TM QFET FQL40N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 40A, 500V, RDS(on) = 0.11? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 155 nC) planar stripe, DMOS technology. Low Crss ( typical 95 pF) This advanced technology has been especially tailored to Fast swi

 

Anderen MOSFET... IRF644B , FQI7N60 , IRF634B , FQI7N80 , FDC6392S , FQI8N60C , FDP047AN08A0 , FQL40N50 , IRFB3306 , FQN1N50C , FQN1N60C , FDP3652 , FQNL2N50B , FQP10N20C , FDB3652 , FQP11N40C , FDP3632 .

 
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