Alle MOSFET. FQP14N30 Datenblatt

 

FQP14N30 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQP14N30

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 147 W

Maximale Drain-Source-Spannung (Vds): 300 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 9.1 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 5 V

Gate-Ladung (Qg): 30 nC

Ausgangswiderstand RDS(on): 0.29 Ohm

Transistorgehäuse: TO220

Ersatz (vergleichstyp) für FQP14N30 Transistor

 

FQP14N30 Datasheet (PDF)

1.1. fqp14n30.pdf Size:728K _fairchild_semi

FQP14N30
FQP14N30

April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 14.4A, 300V, RDS(on) = 0.29? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially t

Anderen MOSFET... FDP3632 , FQP12P20 , FQP13N06L , FQP13N10 , FDD3682 , FQP13N10L , FDB16AN08A0 , FQP13N50 , IRFP4227 , FQP16N25 , FQP17N40 , FDD6688 , FQP17P06 , FQP17P10 , FQP19N20 , FQPF13N50C , FQP19N20C .

 
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