Alle MOSFET. FQP17P06 Datenblatt

 

FQP17P06 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQP17P06

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 79 W

Maximale Drain-Source-Spannung (Vds): 60 V

Maximale Gate-Source-Spannung (Vgs): 25 V

Maximaler Drainstrom (Id): 17 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 21 nC

Ausgangswiderstand RDS(on): 0.12 Ohm

Transistorgehäuse: TO220

Ersatz (vergleichstyp) für FQP17P06 Transistor

 

FQP17P06 Datasheet (PDF)

1.1. fqp17p06.pdf Size:685K _fairchild_semi

FQP17P06
FQP17P06

May 2001 TM QFET FQP17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -17A, -60V, RDS(on) = 0.12? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 80 pF) This advanced technology has been especially tailored to Fast swi

4.1. fqp17p10.pdf Size:668K _fairchild_semi

FQP17P06
FQP17P06

TM QFET FQP17P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -16.5A, -100V, RDS(on) = 0.19? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has been especially tailored to Fast switchin

 5.1. fqp17n08.pdf Size:605K _fairchild_semi

FQP17P06
FQP17P06

January 2001 TM QFET QFET QFET QFET FQP17N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 16.5A, 80V, RDS(on) = 0.115Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 28 pF) This advanced technology has been

5.2. fqp17n08l.pdf Size:563K _fairchild_semi

FQP17P06
FQP17P06

December 2000 TM QFET QFET QFET QFET FQP17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 16.5A, 80V, RDS(on) = 0.1Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 8.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 29 pF) This advanced technology i

 5.3. fqp17n40.pdf Size:728K _fairchild_semi

FQP17P06
FQP17P06

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16A, 400V, RDS(on) = 0.27? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially ta

Anderen MOSFET... FDD3682 , FQP13N10L , FDB16AN08A0 , FQP13N50 , FQP14N30 , FQP16N25 , FQP17N40 , FDD6688 , 2SK2996 , FQP17P10 , FQP19N20 , FQPF13N50C , FQP19N20C , FQPF12N60C , FQP20N06 , FQP20N06L , FQP22N30 .

 
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