Alle MOSFET. FQP24N08 Datenblatt

 

FQP24N08 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: FQP24N08

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 75 W

Maximale Drain-Source-Spannung (Vds): 80 V

Maximale Gate-Source-Spannung (Vgs): 25 V

Gate-Source-Schwellspannung Vgs(th): 4 V

Maximaler Drainstrom (Id): 24 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Ausgangswiderstand (Rds): 0.06 Ohm

Transistorgehäuse: TO220

Ersatz (vergleichstyp) für FQP24N08 Transistor

 

FQP24N08 Datasheet (PDF)

1.1. fqp24n08.pdf Size:711K _fairchild_semi

FQP24N08
FQP24N08

August 2000 TM QFET QFET QFET QFET FQP24N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 24A, 80V, RDS(on) = 0.06? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been especially tailo

Anderen MOSFET... FQP17P10 , FQP19N20 , FQPF13N50C , FQP19N20C , FQPF12N60C , FQP20N06 , FQP20N06L , FQP22N30 , IRF5305 , FQP27N25 , FQP27P06 , FQP2N60C , FQP12N60C , FQP2N80 , FQP8N60C , FQP2N90 , FQP30N06 .

 


FQP24N08
  FQP24N08
  FQP24N08
  FQP24N08
 
FQP24N08
  FQP24N08
  FQP24N08
 

social 

Liste

Letztes Update

MOSFET AP5523GM-HF | AP50T03GJ | AP50T03GH | AP4957AGM-HF | AP4955GM-HF | AP4953GM | AP4880GEM | AP4835GM-HF | AP4816GSM | AP4800AGM | AP7811GM | AP76T03AGMT-HF | AP75T10GS-HF | AP72T03GP | AP72T03GJ-HF |