Alle MOSFET. FQP15P12 Datenblatt

 

FQP15P12 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQP15P12

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 100 W

Maximale Drain-Source-Spannung (Vds): 120 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 15 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 38 nC

Ausgangswiderstand RDS(on): 0.2 Ohm

Transistorgehäuse: TO220

Ersatz (vergleichstyp) für FQP15P12 Transistor

 

FQP15P12 Datasheet (PDF)

1.1. fqp15p12 fqpf15p12.pdf Size:852K _fairchild_semi

FQP15P12
FQP15P12

QFET FQP15P12/FQPF15P12 120V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -15A, -120V, RDS(on) = 0.2? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 110 pF) This advanced technology has been especially tailored to Fast sw

1.2. fqp15p12.pdf Size:921K _fairchild_semi

FQP15P12
FQP15P12

August 2014 FQP15P12 / FQPF15P12 P-Channel QFET® MOSFET -120 V, -15 A, 0.2 Ω Description Features This P-Channel enhancement mode power MOSFET is • -15 A, -120 V, RDS(on) = 0.2 Ω (Max.) @ VGS=-10 V, ID = -7.5 A produced using Fairchild Semiconductor®’s proprietary • Low Gate Charge (Typ. 29 nC) planar stripe and DMOS technology. This advanced • Low Crss (Typ. 110 pF) M

 

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