Alle MOSFET. FQU8P10 Datenblatt

 

FQU8P10 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQU8P10

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 44 W

Maximale Drain-Source-Spannung (Vds): 100 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 6.6 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Ladung (Qg): 12 nC

Ausgangswiderstand RDS(on): 0.53 Ohm

Transistorgehäuse: TO251_IPAK

Ersatz (vergleichstyp) für FQU8P10 Transistor

 

 

FQU8P10 Datasheet (PDF)

1.1. fqu8p10tu.pdf Size:705K _fairchild_semi

FQU8P10
FQU8P10

TM QFET FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -6.6A, -100V, RDS(on) = 0.53Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially tailored

1.2. fqd8p10 fqu8p10.pdf Size:705K _fairchild_semi

FQU8P10
FQU8P10

TM QFET FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored to Fast s

 

Anderen MOSFET... IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

Back to Top

 


FQU8P10
  FQU8P10
  FQU8P10
  FQU8P10
 

social 

Liste

Letztes Update

MOSFET: RJK0329DPB-00 | RJK0323JPD | RJK005N03T146 | RJK005N03FRA | RJJ0601JPN | RJJ0601JPE | RHU003N03FRA | RHU003N03 | RHU002N06FRA | RHU002N06 | RHP030N03T100 | RHP020N06T100 | RHK005N03T146 | RHK005N03FRA | RHK003N06T146 |

 

 

Back to Top