Alle MOSFET. ZXMN0545G4 Datenblatt

 

ZXMN0545G4 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: ZXMN0545G4

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 2 W

Maximale Drain-Source-Spannung (Vds): 450 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 0.14 A

Drain-Kapazität (Cd): 70 pF

Ausgangswiderstand (Rds): 50 Ohm

Transistorgehäuse: SOT223

Ersatz (vergleichstyp) für ZXMN0545G4 Transistor

 

ZXMN0545G4 Datasheet (PDF)

1.1. zxmn0545g4.pdf Size:213K _diodes

ZXMN0545G4
ZXMN0545G4

ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a

Anderen MOSFET... ZXMN7A11K , BSS123Z , BSS123W , ZVN4424Z , ZVN4525E6 , ZVN4525G , ZVN4525Z , ZVNL120G , TPC8107 , ZXMN10A07F , ZXMN10A07Z , ZXMN10A08DN8 , ZXMN10A08E6 , ZXMN10A08G , ZXMN10A09K , ZXMN10A11G , ZXMN10A11K .

 


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