Alle MOSFET. ECH8309 Datenblatt

 

ECH8309 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: ECH8309

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 1.5 W

Maximale Drain-Source-Spannung (Vds): 12 V

Maximale Gate-Source-Spannung (Vgs): 10 V

Maximaler Drainstrom (Id): 9.5 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Ausgangswiderstand (Rds): 0.012 Ohm

Transistorgehäuse: ECH8

Ersatz (vergleichstyp) für ECH8309 Transistor

 

ECH8309 Datasheet (PDF)

1.1. ech8309.pdf Size:285K _sanyo

ECH8309
ECH8309

ECH8309 Ordering number : ENA1418A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8309 Applications Features 1.8V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID --

4.1. ech8308.pdf Size:268K _sanyo

ECH8309
ECH8309

Ordering number : ENA1182 ECH8308 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8308 Applications Features Best suited for load switching. Low ON-resistance. 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-

5.1. ech8320.pdf Size:286K _sanyo

ECH8309
ECH8309

ECH8320 Ordering number : ENA1429 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8320 Applications Features Low ON-resistance. 1.8V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS 10 V Dra

5.2. ech8315.pdf Size:285K _sanyo

ECH8309
ECH8309

ECH8315 Ordering number : ENA1387 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8315 Applications Features Low ON-resistance. 4V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain

5.3. ech8310.pdf Size:284K _sanyo

ECH8309
ECH8309

ECH8310 Ordering number : ENA1430 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8310 Applications Features 4V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --9 A

Anderen MOSFET... CPH6442 , CPH6443 , CPH6444 , CPH6445 , EC3A03B , EC3A04B , EC4401C , ECH8308 , 2SK163 , ECH8310 , ECH8315 , ECH8320 , ECH8410 , ECH8419 , ECH8601M , ECH8602M , ECH8649 .

 


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