Alle MOSFET. NTE4153N Datenblatt

 

NTE4153N MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: NTE4153N

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 0.3 W

Maximale Drain-Source-Spannung (Vds): 20 V

Maximale Gate-Source-Spannung (Vgs): 6 V

Maximaler Drainstrom (Id): 0.915 A

Ausgangswiderstand RDS(on): 0.17 Ohm

Transistorgehäuse: SC89

Ersatz (vergleichstyp) für NTE4153N Transistor

 

NTE4153N Datasheet (PDF)

1.1. nta4153n nte4153n.pdf Size:68K _onsemi

NTE4153N
NTE4153N

NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N-Channel with ESD Protection, SC-75 and SC-89 Features http://onsemi.com Low RDS(on) Improving System Efficiency Low Threshold Voltage, 1.5 V Rated V(BR)DSS RDS(on) TYP ID MAX ESD Protected Gate 0.127 W @ 4.5 V Pb-Free Packages are Available 0.170 W @ 2.5 V 20 V 915 mA Applications 0.242 W @ 1.8 V Load/Power Sw

4.1. nta4151p nte4151p.pdf Size:66K _onsemi

NTE4153N
NTE4153N

NTA4151P, NTE4151P Small Signal MOSFET -20 V, -760 mA, Single P-Channel, Gate Zener, SC-75, SC-89 Features http://onsemi.com Low RDS(on) for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) V(BR)DSS RDS(on) TYP ID MAX SC-75 Standard Gullwing Package 0.26 W @ -4.5 V ESD Protected Gate -20 V 0.35 W @ -2.5 V -760 mA Pb-Free Packages are Available 0

 

Anderen MOSFET... NTD5867NL , NTD6414AN , NTD6415AN , NTD6415ANL , NTD6416AN , NTD6416ANL , NTD70N03R , NTE4151P , IRFP4229 , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P .

 
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