Alle MOSFET. IXFH88N20Q Datenblatt

 

IXFH88N20Q MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IXFH88N20Q

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 500 W

Maximale Drain-Source-Spannung (Vds): 200 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Gate-Source-Schwellspannung Vgs(th): 4 V

Maximaler Drainstrom (Id): 88 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 200 nS

Ausgangswiderstand (Rds): 0.03 Ohm

Transistorgehäuse: TO247

Ersatz (vergleichstyp) für IXFH88N20Q Transistor

 

IXFH88N20Q Datasheet (PDF)

3.1. ixfh88n30p ixft88n30p ixfk88n30p.pdf Size:146K _ixys

IXFH88N20Q
IXFH88N20Q

PolarTM HiPerFETTM VDSS = 300V IXFT88N30P ID25 = 88A Power MOSFET IXFH88N30P ? ? RDS(on) ? ? ? 40m? ? ? ? ? IXFK88N30P ? trr ? ? 200ns ? ? TO-268 (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S Tab Symbol Test Conditions Maximum Ratings TO-247(IXFH) VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M? 300 V VGSS Continuous 20 V G

5.1. ixfh80n20q ixfk80n20q ixft80n20q.pdf Size:70K _ixys

IXFH88N20Q
IXFH88N20Q

IXFH 80N20Q HiPerFETTM VDSS = 200 V IXFK 80N20Q Power MOSFETs ID25 = 80 A IXFT 80N20Q Q-Class RDS(on) = 28 mW trr ? 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 200 V VDGR TJ = 25C to 150C; RGS = 1 MW 200 V (TAB) VGS Continuous 20 V VGSM Transient 30 V

5.2. ixfh8n80 ixfh9n80.pdf Size:204K _ixys

IXFH88N20Q
IXFH88N20Q

Preliminary Data Sheet VDSS ID25 RDS(on) trr HiPerFETTM IXFH8N80 800V 8A 1.1Ω 250 ns IXFH9N80 800V 9A 0.9Ω 250 ns Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient ±30 V TO-247 SMD*

5.3. ixfh80n085 ixft80n085.pdf Size:54K _ixys

IXFH88N20Q
IXFH88N20Q

IXFH 80N085 VDSS = 85 V HiPerFETTM IXFT 80N085 ID25 = 80 A Power MOSFETs RDS(on) = 9 mW N-Channel Enhancement Mode trr ? 200 ns Avalanche Rated, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C85 V VDGR TJ = 25C to 150C; RGS = 1 MW 85 V VGS Continuous 20 V VGSM Transient 30 V (TAB) ID25 TC = 25C80 A IL(RMS) Lead

5.4. ixfh80n10q ixft80n10q.pdf Size:52K _ixys

IXFH88N20Q
IXFH88N20Q

IXFH 80N10Q VDSS = 100 V HiPerFETTM IXFT 80N10Q ID25 = 80 A Power MOSFETs RDS(on) = 15 mW Q-Class trr ? 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 100 V VDGR TJ = 25C to 150C; RGS = 1 MW 100 V VGS Continuous 20 V VGSM Transient 30

5.5. ixfh86n30t ixft86n30t.pdf Size:176K _ixys

IXFH88N20Q
IXFH88N20Q

Advance Technical Information TrenchTM HiperFETTM VDSS = 300V IXFH86N30T Power MOSFET ID25 = 86A IXFT86N30T ? ? RDS(on) ? ? ? 43m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 150C 300 V D D (Tab) S VDGR TJ = 25C to 150C, RGS = 1M? 300 V VGSS Continuous 20 V VGSM Transie

Anderen MOSFET... IXFH74N20 , IXFH74N20P , IXFH7N90Q , IXFH80N08 , IXFH80N085 , IXFH80N10 , IXFH80N15Q , IXFH86N30T , IRFZ24N , IXFH88N30P , IXFH96N15P , IXFH96N20P , IXFH9N80Q , IXFK102N30P , IXFK120N20P , IXFK120N25 , IXFK120N25P .

 


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