Alle Transistoren. 2SC151 Datenblatt

 

2SC151 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2SC151

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Ptot): 0.75 W

Kollektor-Basis-Sperrspannung (Vcb): 40 V

Emitter-Basis-Sperrspannung (Veb): 5 V

Kollektorstrom (Ic): 0.2 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Transitfrequenz (ft): 60 MHz

Kollektor-Kapazität (Cc): 12 pF

Kurzschluss-Stromverstärkung (hfe): 50

Transistorgehäuse: TO5

Ersatz (vergleichstyp) für 2SC151

 

2SC151 Datasheet (PDF)

1.1. 2sc1518 e.pdf Size:51K _panasonic

2SC151
2SC151

Transistor 2SC1518 Silicon NPN epitaxial planer type For high-frequency bias oscillation of tape recorders Unit: mm For DC-DC converter 5.9 0.2 4.9 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances and high efficiency with a low-voltage power supply. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings

1.2. 2sc1518.pdf Size:47K _panasonic

2SC151
2SC151

Transistor 2SC1518 Silicon NPN epitaxial planer type For high-frequency bias oscillation of tape recorders Unit: mm For DC-DC converter 5.9 0.2 4.9 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances and high efficiency with a low-voltage power supply. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings

1.3. 2sc1514.pdf Size:43K _hitachi

2SC151

1.4. 2sc1515.pdf Size:28K _hitachi

2SC151
2SC151

2SC1515(K) Silicon NPN Triple Diffused Application High voltage switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1515 (K) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCES 200 V VCEO 150 V Emitter to base voltage VEBO 5V Collector current IC 50 mA Collector power dissipation

1.5. 2sc1514.pdf Size:117K _inchange_semiconductor

2SC151
2SC151

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1514 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage APPLICATIONS ·Designed for use in high frequency high voltage amplifier and TV viedo output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VA

1.6. 2sc1516.pdf Size:63K _inchange_semiconductor

2SC151
2SC151

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1516 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage APPLICATIONS ·For medium power amplifer applicatons PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector

Anderen transistoren... 2SC1503 , 2SC1504 , 2SC1505 , 2SC1506 , 2SC1507 , 2SC1509 , 2SC150H , 2SC150T , AC128 , 2SC15-1 , 2SC1510 , 2SC1511 , 2SC1512 , 2SC1514 , 2SC1515 , 2SC1515K , 2SC1516 .

 


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