Alle Transistoren. 2SC1626 Datenblatt

 

2SC1626 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2SC1626

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Ptot): 1.5 W

Kollektor-Basis-Sperrspannung (Vcb): 80 V

Kollektor-Emitter-Sperrspannung (Vce): 80 V

Emitter-Basis-Sperrspannung (Veb): 5 V

Kollektorstrom (Ic): 0.75 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Transitfrequenz (ft): 50 MHz

Kollektor-Kapazität (Cc): 30 pF

Kurzschluss-Stromverstärkung (hfe): 70

Transistorgehäuse: TO220

Ersatz (vergleichstyp) für 2SC1626

 

2SC1626 Datasheet (PDF)

1.1. 2sc1626 2sa816.pdf Size:112K _microelectronics

2SC1626
2SC1626

1.2. 2sc1626.pdf Size:65K _inchange_semiconductor

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2SC1626

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1626 DESCRIPTION · ·With TO-220C package ·Complement to type 2SA816 APPLICATIONS ·Designed for the driver stages of 30-50W high-fidelity amplifiers and medium speed switching up to 2A peak current PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outli

4.1. 2sc1623-l5-l6-l7.pdf Size:326K _update

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2SC1623-L5 MCC Micro Commercial Components TM 2SC1623-L6 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC1623-L7 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Halogen free available upon request by adding suffix "-HF" • Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) • High DC Cu

4.2. 2sc1624 2sc1625.pdf Size:90K _toshiba

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2SC1626

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.3. 2sc1627.pdf Size:210K _toshiba

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2SC1626

2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1627 Driver Stage Amplifier Applications Unit: mm Voltage Amplifier Applications Complementary to 2SA817 Driver stage application of 20 to 25 watts amplifiers. Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Em

4.4. 2sc1627a.pdf Size:170K _toshiba

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2SC1626

4.5. 2sc1622a.pdf Size:234K _nec

2SC1626
2SC1626

4.6. 2sc1621.pdf Size:229K _nec

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2SC1626

4.7. 2sc1623.pdf Size:60K _nec

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2SC1626

DATA SHEET SILICON TRANSISTOR 2SC1623 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS High DC Current Gain: hFE = 200 TYP. in millimeters (VCE = 6.0 V, IC = 1.0 mA) 2.8 0.2 High Voltage: VCEO = 50 V 1.5 0.65+0.1 0.15 ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Current (TA = 25 ?C) 2 Collector to Base Voltag

4.8. 2sc1623k.pdf Size:492K _secos

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2SC1623K 0.1A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC current gain :hFE=200(Typ), VCE=6V, IC=1mA. A L High Voltage:VCEO=50V. 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SC1623K-P 2SC1623K-Y 2SC1623K-G 2SC1623K-B Range 90~180

4.9. 2sc1624 2sc1625.pdf Size:66K _inchange_semiconductor

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2SC1626

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1624 2SC1625 DESCRIPTION ·With TO-220 package ·Complement to type 2SA814/815 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ra

4.10. 2sc1623.pdf Size:273K _gsme

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? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM1623 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic ???? Symbol ?? Rating ??? Unit ?? Collector-Emitter Voltage VCEO 50 Vdc ???-????? Collector-Base Voltage VCBO 60 Vdc ???-???? Emitter-Base Voltage VEBO 5.0 V

4.11. 2sc1627a to-92mod.pdf Size:231K _lge

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2SC1626

2SC1627A TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Complementary to 2SA817A 8.400 Driver Stage Application of 30 to 35 Watts Amplifiers 8.800 0.900 1.100 0.400 MAXIMUM RATINGS(TA=25? unless otherwise noted) 0.600 13.800 14.200 Symbol parameter Value Units VCBO 80 V Collector-Base Voltage 1.500 TYP 80 V

4.12. 2sc1623 sot-23.pdf Size:224K _lge

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2SC1623 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage Dimensions in inches and (millimeters) 50 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Col

4.13. 2sc1623.pdf Size:204K _wietron

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2SC1623 NPN General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current - Continuous 150 mA Total Device Dissipation FR-5 Board PD 225 mW TA=25°C 1.8 mW/°C Derate above 25°C R?JA Thermal Resistance, Jun

4.14. 2sc1623xlt1.pdf Size:373K _willas

2SC1626
2SC1626

FM120-M WILLAS 2SC1623xLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize boar

4.15. 2sc1623 sot-23.pdf Size:284K _can-sheng

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 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2SC1623 TRANSISTOR (NPN) FEATURES High voltage:Vceo=50V MARKING:L6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base V

4.16. 2sc1627af.pdf Size:498K _blue-rocket-elect

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2SC1626

2SC1627AF(BR3DG1627AF) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-126F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126F Plastic Package. 特征 / Features 适合于 30~35W 的输出的驱动级,与 2SA817AF(BR3CG817AF)互补。 Driver stage of 30 to 35 watts application, complementary pair with 2SA817AF(BR3CG817AF). 用途 / Applications 驱

4.17. 2sc1623w.pdf Size:1122K _blue-rocket-elect

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2SC1626

2SC1623W(BR3DG1623W) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-323 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-323 Plastic Package. 特征 / Features 高h ,高 V 与 2SA812W(BR3CG812W)互补。 FE CEO, High hFE and VCEO, complementary pair with 2SA812W(BR3CG812W). 用途 / Applications 用于一般音频放大。 Audio frequency general a

4.18. 2sc1623t.pdf Size:1530K _blue-rocket-elect

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2SC1626

2SC1623T(BR3DG1623T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features 高h ,高 V 与 2SA812T(BR3CG812T)互补。 FE CEO, High hFE and VCEO, complementary pair with 2SA812T(BR3CG812T). 用途 / Applications 用于一般音频放大。 Audio frequency general amp

4.19. l2sc1623rlt1g.pdf Size:282K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC1623QLT1G Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel S-L2SC1623QLT1G

4.20. l2sc1623slt1g.pdf Size:280K _lrc

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LESHAN RADIO COMPANY, LTD. L2SC1623QLT1G General Purpose Transistors Series Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC1623QLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel S-L2SC1623QLT1

4.21. l2sc1623qlt1g.pdf Size:318K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC1623QLT1G Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel S-L2SC1623QLT1G

4.22. l2sc1623swt1g.pdf Size:308K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors Pb-Free packkage is available L2SC1623SWT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 3 L2SC1623SWT1G L7 3000/Tape&Reel 10000/Tape&Reel L2SC1623SWT3G L7 1 2 MAXIMUM RATINGS SC-70 Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V 3 COLLECTOR Emitter-Base Volt

4.23. 2sc1621.pdf Size:1489K _kexin

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SMD Type Transistors NPN Transistors 2SC1621 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=200mA ● Collector Emitter Voltage VCEO=20V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collect

4.24. 2sc1623.pdf Size:1128K _kexin

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SMD Type Transistors NPN Transistors 2SC1623 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features High DC Current Gain: hFE = 200 TYP. 1 2 +0.1 +0.05 VCE = 6.0 V, IC = 1.0 mA 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 High Voltage: VCE O = 50 V 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 60 V Collec

4.25. 2sc1623.pdf Size:258K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA 2. EMITTER High voltage:VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage 50 V VCEO Collector

Anderen transistoren... 2SC1623 , 2SC1623L3 , 2SC1623L4 , 2SC1623L5 , 2SC1623L6 , 2SC1623L7 , 2SC1624 , 2SC1625 , MJE13005 , 2SC1627 , 2SC1627A , 2SC1627AO , 2SC1627AY , 2SC1628 , 2SC1629 , 2SC163 , 2SC1630 .

 


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