Alle Transistoren. 2SC326 Datenblatt

 

2SC326 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2SC326

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Ptot): 0.25 W

Kollektor-Basis-Sperrspannung (Vcb): 20 V

Kollektorstrom (Ic): 0.05 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Transitfrequenz (ft): 500 MHz

Kurzschluss-Stromverstärkung (hfe): 50

Transistorgehäuse: TO72

Ersatz (vergleichstyp) für 2SC326

 

2SC326 Datasheet (PDF)

1.1. 2sc3265-o.pdf Size:322K _update

2SC326
2SC326

MCC TM Micro Commercial Components 2SC3265-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3265-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General • Power switching application • Complementary to 2SA1298 Purpose Amplifier • Low f

1.2. 2sc3265-y.pdf Size:322K _update

2SC326
2SC326

MCC TM Micro Commercial Components 2SC3265-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3265-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General • Power switching application • Complementary to 2SA1298 Purpose Amplifier • Low f

1.3. 2sc3267.pdf Size:224K _toshiba

2SC326
2SC326

2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3267 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) @I = 2 A C Complementary to 2SA1297 Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20 V Emitt

1.4. 2sc3265.pdf Size:189K _toshiba

2SC326
2SC326

2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3265 Low Frequency Power Amplifier Applications Unit: mm Power Switching Applications High DC current gain: hFE (1) = 100~320 Low saturation voltage: V = 0.4 V (max) CE (sat) (I = 500 mA, I = 20 mA) C B Complementary to 2SA1298 Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Uni

1.5. 2sc3266.pdf Size:215K _toshiba

2SC326
2SC326

2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3266 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (I = 2 A) C Complementary to 2SA1296 Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20 V Emit

1.6. 2sc3268.pdf Size:350K _toshiba

2SC326
2SC326

2SC3268 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3268 VHF~UHF Band Low Noise Amplifier Applications Unit: mm NF = 1.7dB, |S21e|2 = 15.0dB (f = 500 MHz) NF = 2dB, |S |2 = 9.5dB (f = 1000 MHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEB

1.7. 2sc3263.pdf Size:28K _sanken-ele

2SC326

LAPT 2SC3263 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1294) Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 0.1 VCBO 230 V ICBO VCB=230V 100max A 9.6 2.0 IEBO VCEO 230 V VEB=5V 100max A V(BR)C

1.8. 2sc3264.pdf Size:28K _sanken-ele

2SC326

LAPT 2SC3264 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) Application : Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 6.0 0.3 36.4 VCBO 230 ICBO VCB=230V 100max A V 0.2 24.4 2.1 0.1 2-o3.2 VCEO 230 IEBO VEB=5V 100max

1.9. 2sc3263.pdf Size:264K _inchange_semiconductor

2SC326
2SC326

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3263 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 230V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1294 APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230

1.10. 2sc3264.pdf Size:273K _inchange_semiconductor

2SC326
2SC326

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3264 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 230V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1295 APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 23

1.11. 2sc3265.pdf Size:979K _kexin

2SC326
2SC326

SMD Type Transistors NPN Transistors 2SC3265 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● High DC current gain ● Low saturation voltage 1 2 +0.1 ● Complementary to 2SA1298 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Coll

1.12. 2sc3268.pdf Size:1289K _kexin

2SC326
2SC326

SMD Type Transistors NPN Transistors 2SC3268 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=70mA ● Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 17 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VE

Anderen transistoren... 2SC3256Q , 2SC3256R , 2SC3256S , 2SC3257 , 2SC3258 , 2SC3258O , 2SC3258Y , 2SC3259 , BC547C , 2SC3260 , 2SC3261 , 2SC3262 , 2SC3263 , 2SC3264 , 2SC3265 , 2SC3265O , 2SC3265Y .

 


2SC326
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2SC326
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