Alle Transistoren. 2SD1246 Datenblatt

 

2SD1246 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2SD1246

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Ptot): 0.75 W

Kollektor-Basis-Sperrspannung (Vcb): 30 V

Kollektor-Emitter-Sperrspannung (Vce): 25 V

Emitter-Basis-Sperrspannung (Veb): 6 V

Kollektorstrom (Ic): 2 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Transitfrequenz (ft): 150 MHz

Kollektor-Kapazität (Cc): 19 pF

Kurzschluss-Stromverstärkung (hfe): 100

Transistorgehäuse: TO92

Ersatz (vergleichstyp) für 2SD1246

 

2SD1246 Datasheet (PDF)

1.1. 2sd1246.pdf Size:85K _sanyo

2SD1246
2SD1246

Ordering number:1030E PNP/NPN Epitaxial Planar Silicon Transistors 2SB926/2SD1246 Large-Current Driving Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit:mm equipment. 2003A [2SB926/2SD1246] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. JEDEC : TO-92 B : Base

4.1. 2sd1247.pdf Size:88K _sanyo

2SD1246
2SD1246

Ordering number:1029C PNP/NPN Epitaxial Planar Silicon Transistors 2SB927/2SD1247 Large-Current Driving Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit:mm equipment. 2006A [2SB927/2SD1247] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. ( ) : 2SB927 EIAJ : SC-

4.2. 2sd1244.pdf Size:40K _panasonic

2SD1246
2SD1246

Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as 0.85 well as stand-alone fixi

4.3. 2sd1244 e.pdf Size:44K _panasonic

2SD1246
2SD1246

Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as 0.85 well as stand-alone fixi

4.4. 2sd1243.pdf Size:88K _inchange_semiconductor

2SD1246
2SD1246

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1243 DESCRIPTION ·With TO-3PN package ·Wide area of safe operation APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum r

4.5. 2sd1248.pdf Size:260K _inchange_semiconductor

2SD1246
2SD1246

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1248 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·Low Collector Saturation Voltage APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAME

Anderen transistoren... 2SD1241 , 2SD1241A , 2SD1242 , 2SD1242A , 2SD1243 , 2SD1243A , 2SD1244 , 2SD1245 , 2SC5200 , 2SD1246R , 2SD1246S , 2SD1246T , 2SD1246U , 2SD1247 , 2SD1247R , 2SD1247S , 2SD1247T .

 


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