Alle Transistoren. 2SD1972 Datenblatt

 

2SD1972 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2SD1972

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Ptot): 15 W

Kollektor-Basis-Sperrspannung (Vcb): 60 V

Kollektor-Emitter-Sperrspannung (Vce): 60 V

Emitter-Basis-Sperrspannung (Veb): 7 V

Kollektorstrom (Ic): 3 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Kurzschluss-Stromverstärkung (hfe): 250

Transistorgehäuse: TO220

Ersatz (vergleichstyp) für 2SD1972

 

2SD1972 Datasheet (PDF)

4.1. 2sd1979 e.pdf Size:42K _panasonic

2SD1972
2SD1972

Transistor 2SD1979 Silicon NPN epitaxial planer type For low-voltage output amplification Unit: mm For muting For DC-DC converter 2.1 0.1 0.425 1.25 0.1 0.425 Features 1 Low ON resistance Ron. High foward current transfer ratio hFE. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absolute M

4.2. 2sd1979.pdf Size:37K _panasonic

2SD1972
2SD1972

Transistor 2SD1979 Silicon NPN epitaxial planer type For low-voltage output amplification Unit: mm For muting For DC-DC converter 2.1 0.1 0.425 1.25 0.1 0.425 Features 1 Low ON resistance Ron. High foward current transfer ratio hFE. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absolute M

4.3. 2sd1975.pdf Size:54K _panasonic

2SD1972
2SD1972

Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Unit: mm Complementary to 2SB1317 and 2SB1317A ? 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) 1.5 High transition frequency fT Optimum for the output stage of a HiF

4.4. 2sd1974.pdf Size:34K _hitachi

2SD1972
2SD1972

2SD1974 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 2, 4 1 2 3 1 ID 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 3 2SD1974 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 6V Collector current IC 0.8 A Collector p

4.5. 2sd1978.pdf Size:32K _hitachi

2SD1972
2SD1972

2SD1978 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Complementary pair with 2SB1387 Outline TO-92MOD 2 3 ID 1. Emitter 2 k? 0.5 k? 2. Collector (Typ) (Typ) 3. Base 1 3 2 1 2SD1978 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltag

4.6. 2sd1970.pdf Size:32K _hitachi

2SD1972
2SD1972

2SD1970 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 32 k? 0.4 k? 2 3 (Typ) (Typ) 1 2SD1970 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 24 V Collector to emitter voltage VCEO 24 V Emitter to base voltage VEBO 7V Collector current IC 2A Collector p

4.7. 2sd1976.pdf Size:36K _hitachi

2SD1972
2SD1972

2SD1976 Silicon NPN Triple Diffused Application High voltage switching, igniter Feature Built-in High voltage zener diode (300 V) High Speed switching Outline TO-220AB 2 1 1. Base ID 2. Collector (Flange) 1 3. Emitter 1.6 k? 160 ? 2 3 (Typ) (Typ) 3 2SD1976 Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit Collector to base voltage VCBO 300 V Collector to em

4.8. 2sd1977.pdf Size:32K _no

2SD1972

4.9. 2sd1975 2sd1975a.pdf Size:104K _inchange_semiconductor

2SD1972
2SD1972

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1975 2SD1975A DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1317/1317A ·Wide area of safe operation ·High transition frequency fT APPLICATIONS ·For high power amplification ·Optimum for the output stage of a Hi-Fi audio amplifier PINNING PIN DESCRIPTION 1 Base Collector;connecte

4.10. 2sd1975.pdf Size:59K _inchange_semiconductor

2SD1972
2SD1972

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1975 DESCRIPTION ·Good Linearity of hFE ·Wide Area of Safe Operation ·High DC Current-Gain Bandwidth Product ·Complement to Type 2SB1317 APPLICATIONS ·High power amplification ·Optimum for the output stage of a Hi-Fi audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE U

4.11. 2sd1974.pdf Size:945K _kexin

2SD1972
2SD1972

SMD Type Transistors NPN Transistors 2SD1974 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=0.8A C ● Collector Emitter Voltage VCEO=25V 0.42 0.1 0.46 0.1 B ID 1.Base 2.Collector 3.Emitter E ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitter - Ba

Anderen transistoren... 2SD1966 , 2SD1967 , 2SD1968 , 2SD1969 , 2SD196A , 2SD197 , 2SD1970 , 2SD1971 , 2SC945 , 2SD1973 , 2SD1974 , 2SD1975 , 2SD1976 , 2SD1977 , 2SD1978 , 2SD1979 , 2SD197A .

 


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