Alle Transistoren. 2N3174 Datenblatt

 

2N3174 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2N3174

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Ptot): 75 W

Kollektor-Basis-Sperrspannung (Vcb): 100 V

Kollektor-Emitter-Sperrspannung (Vce): 100 V

Kollektorstrom (Ic): 3 A

Höchste Sperrschichttemperatur (Tj): 200 °C

Transitfrequenz (ft): 1 MHz

Kurzschluss-Stromverstärkung (hfe): 12

Transistorgehäuse: TO3

Ersatz (vergleichstyp) für 2N3174

 

2N3174 Datasheet (PDF)

1.1. 2n3174.pdf Size:12K _semelab

2N3174

2N3174 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 3A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acco

Anderen transistoren... 2N3168 , 2N3169 , 2N316A , 2N317 , 2N3170 , 2N3171 , 2N3172 , 2N3173 , 8050 , 2N3175 , 2N3176 , 2N3177 , 2N3178 , 2N3179 , 2N317A , 2N3180 , 2N3181 .

 


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