Alle Transistoren. C112 Datenblatt

 

C112 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: C112

Werkstoff: Si

Wandlerpolarität: PNP

Gesamt-Verlustleistung (Pc): 0.25 W

Kollektor-Basis-Sperrspannung (Vcb): 25 V

DC-Kollektorstrom (Ic): 0.05 A

Betriebstemperatur (Tj): 150 °C

Transitfrequenz (ft): 0.7 MHz

Kollektor-Kapazität (Cc): 50 pF

DC-Stromverstärkung (hfe): 18

Ersatz (vergleichstyp) für C112

 

 

C112 Datasheet (PDF)

1.1. fc112.pdf Size:49K _sanyo

C112
C112

Ordering number:EN3080 FC112 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions On-chip bias resistors (R1=22k? , R2=22k? ) unit:mm Composite type with 2 transistors contained in the 2066 CP package currently in use, improving the mount- [FC112] ing efficiency greatly. The FC112 is formed with two chips, being equiva- lent to

1.2. 2sc1122a.pdf Size:191K _no

C112
C112

 1.3. dtc101-dtc108 dtc110-dtc112 dtc114 dtc117 dtc123 dtc124.pdf Size:282K _first_silicon

C112
C112

DTC 101 ~ 108 SEMICONDUCTOR DTC 110 ~ 112 / 114 /117 TECHNICAL DATA DTC 123 / 124 Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor 3 Transistor) contains a single transistor with a monolithic bi

Anderen transistoren... 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

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