Alle Transistoren. 2N3737 Datenblatt

 

2N3737 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2N3737

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Ptot): 0.5 W

Kollektor-Basis-Sperrspannung (Vcb): 75 V

Kollektor-Emitter-Sperrspannung (Vce): 50 V

Emitter-Basis-Sperrspannung (Veb): 5 V

Kollektorstrom (Ic): 1.5 A

Höchste Sperrschichttemperatur (Tj): 200 °C

Transitfrequenz (ft): 250 MHz

Kollektor-Kapazität (Cc): 9 pF

Kurzschluss-Stromverstärkung (hfe): 20

Transistorgehäuse: TO5

Ersatz (vergleichstyp) für 2N3737

 

2N3737 Datasheet (PDF)

1.1. 2n3737ub.pdf Size:178K _upd

2N3737
2N3737

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3735L JAN 2N3737 2N3737UB JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol M

1.2. 2n3737.pdf Size:210K _semicoa

2N3737
2N3737

2N3737 Silicon NPN Transistor Data Sheet Description Applications General purpose Low power Semicoa Semiconductors offers: NPN silicon transistor Screening and processing per MIL-PRF-19500 Appendix E JAN level (2N3737J) JANTX level (2N3737JX) JANTXV level (2N3737JV) JANS level (2N3737JS) QCI to the applicable level 100% die visual inspection per MIL-STD

5.1. 2n373 2n374 2n456 2n457 2n497 2n544 2n561 2n578 2n579 2n580.pdf Size:317K _rca

2N3737

5.2. 2n3735l.pdf Size:178K _upd

2N3737
2N3737

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3735L JAN 2N3737 2N3737UB JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol M

5.3. 2n3735csm4.pdf Size:18K _upd

2N3737
2N3737

2N3735CSM4 Medium Current NPN Silicon Annular Transistors Designed for High-Speed Switching and Driver Applications in a Ceramic Surface Mount Package MECHANICAL DATA Dimensions in mm (inches) 1.40 ± 0.15 5.59 ± 0.13 (0.055 ± 0.006) (0.22 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) FEATURES 0.23 rad. (0.009) • High Voltage 3 2 • Ceramic Surface Mount Package 0.23 4 1 min

5.4. 2n3738.pdf Size:17K _semelab

2N3737
2N3737

2N3738 MECHANICAL DATA POWER TRANSISTORS Dimensions in mm NPN SILICON 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. 1 2 FEATURES Hermetically Packaged. Low Saturation Voltage High Gain 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO66 Package (TO-213AA) Pin 1 = Base Pin 2 = Emitter Case = Collector ABSOLUTE M

5.5. 2n3734.pdf Size:11K _semelab

2N3737

2N3734 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 30V dia. IC = 1.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 c

5.6. 2n3375 2n3632 2n3733.pdf Size:609K _microsemi

2N3737
2N3737

Anderen transistoren... 2N373-33 , 2N3734 , 2N3734A , 2N3734S , 2N3735 , 2N3735S , 2N3736 , 2N3736A , A733 , 2N3737A , 2N3738 , 2N3739 , 2N374 , 2N3740 , 2N3740A , 2N3740AR , 2N3741 .

 


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