Alle Transistoren. 2N1114 Datenblatt

 

2N1114 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2N1114

Werkstoff: Ge

Polarity: NPN

Gesamt-Verlustleistung (Ptot): 0.15 W

Kollektor-Basis-Sperrspannung (Vcb): 25 V

Emitter-Basis-Sperrspannung (Veb): 15 V

Kollektorstrom (Ic): 0.2 A

Höchste Sperrschichttemperatur (Tj): 100 °C

Transitfrequenz (ft): 4 MHz

Kurzschluss-Stromverstärkung (hfe): 40

Transistorgehäuse: TO5

Ersatz (vergleichstyp) für 2N1114

 

2N1114 Datasheet (PDF)

5.1. fdfm2n111.pdf Size:289K _fairchild_semi

2N1114
2N1114

August 2005 FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description Applications FDFM2N111 combines the exceptional performance of Standard Buck Converter Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a Features MicroFET package. This device is designed specifically as a single package

Anderen transistoren... 2N1107 , 2N1108 , 2N1109 , 2N111 , 2N1110 , 2N1111 , 2N1111A , 2N1111B , BC108 , 2N1115 , 2N1115A , 2N1116 , 2N1117 , 2N1118 , 2N1118A , 2N1119 , 2N111A .

 


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