Alle Transistoren. PMD20K150 Datenblatt

 

PMD20K150 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: PMD20K150

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Ptot): 150 W

Kollektor-Basis-Sperrspannung (Vcb): 150 V

Kollektor-Emitter-Sperrspannung (Vce): 150 V

Emitter-Basis-Sperrspannung (Veb): 2 V

Kollektorstrom (Ic): 14 A

Höchste Sperrschichttemperatur (Tj): 200 °C

Kurzschluss-Stromverstärkung (hfe): 300

Transistorgehäuse: TO3

Ersatz (vergleichstyp) für PMD20K150

 

PMD20K150 Datasheet (PDF)

4.1. pmd20k200.pdf Size:113K _upd

PMD20K150
PMD20K150



5.1. pmd2001d.pdf Size:174K _upd

PMD20K150
PMD20K150

PMD2001D MOSFET driver Rev. 02 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features Switching transistors in push-pull configuration Application-optimized pinout Space-saving solution Internal connections to minimize layo

5.2. mpmd200b120rh.pdf Size:324K _igbt

PMD20K150
PMD20K150

MPM B120RH MD200B NPT & R d Type 1200V le N Rugged e V IGBT Modul General D on Descriptio Fea atures MagnaChip’s IGBT Mod package dule 7DM-3 p  BVCES= 1200V V  Lo n Loss : VCE(sa = 2.7V (typ.) ow Conduction at) devices are optimized to ses and o reduce loss ast & Soft Anti-Parallel FWD  Fa D  Sh ed : Min. 10us hort circuit rate s at TC=100℃ switch

5.3. wpmd2012.pdf Size:825K _willsemi

PMD20K150
PMD20K150

WPMD2012 WPMD2012 Dual P-Channel, -20V, -0.64A, Small Signal MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( ) 0.550@ VGS=-4.5V 0.740@ VGS=-2.5V -20 0.910@ VGS=-1.8V SOT-363 Descriptions D1 G2 S2 6 5 4 The WPMD2012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device

5.4. wpmd2011.pdf Size:194K _willsemi

PMD20K150
PMD20K150

WPMD2011 WPMD2011 Dual P-Channel -20V, -4.4A, 52m Power MOSFET Http://www.willsemi.com Rds(on) V(BR)DSS (Ω) 0.052 @ -4.5V 0.064 @ -2.5V -20 0.080 @ -1.8V DFN2x2-6L 0.090 @ -1.5V Description D1 The WPMD2011 is P-Channel enhancement dual S1 D1 1 6 MOS Field Effect Transistor. Uses advanced trench G2 technology and design to provide excellent RDS(ON) with G1 2 5 low gat

5.5. wpmd2013.pdf Size:376K _willsemi

PMD20K150
PMD20K150

WPMD2013 WPMD2013 Dual P-Channel, -20V, -0.64A, Small Signal MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( ) 0.550@ VGS=-4.5V 0.740@ VGS=-2.5V -20 0.860@ VGS=-1.8V SOT-563 Descriptions D1 G2 S2 6 5 4 The WPMD2013 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device

5.6. wpmd2008.pdf Size:817K _willsemi

PMD20K150
PMD20K150

WPMD2008 WPMD2008 Http://www.sh-willsemi.com 4 Dual P-Channel, -20 V, - .1A, Power MOSFET Description The WPMD2008 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPMD2008 is Pb-free. Features V R MAX (BR)DSS DS(on) 110m @ -4.5V -20 V 138m @ -2.5V PI

5.7. wpmd2010.pdf Size:1132K _willsemi

PMD20K150
PMD20K150

 WPMD2010 WPMD2010 Http://www.sh-willsemi.com Dual P-Channel, -20 V, -3.6A, Power MOSFET Description The WPMD2010 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPMD2010 is Pb-free. Features V(BR)DSS RDS(on) Typ 75mΩ@ -4.5V -20 V 101mΩ@ -

Anderen transistoren... PMD18K60 , PMD18K80 , PMD19K100 , PMD19K200 , PMD19K40 , PMD19K60 , PMD19K80 , PMD20K120 , 9014 , PMD25K120 , PMD25K150 , PMST4401 , PN1613 , PN1613A , PN1613R , PN1711 , PN1893 .

 


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