Alle Transistoren. 2DB1386Q Datenblatt

 

2DB1386Q . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2DB1386Q

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Ptot): 1 W

Kollektor-Emitter-Sperrspannung (Vce): 20 V

Kollektorstrom (Ic): 5 A

Transitfrequenz (ft): 100 MHz

Kurzschluss-Stromverstärkung (hfe): 120

Transistorgehäuse: SOT89

Ersatz (vergleichstyp) für 2DB1386Q

 

2DB1386Q Datasheet (PDF)

1.1. 2db1386q-r.pdf Size:223K _diodes

2DB1386Q
2DB1386Q

2DB1386Q/R PNP SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Mechanical Data SOT89-3L Case: SOT89-3L COLLECTOR Case Material: Molded Plastic, "Green Molding Comp

Anderen transistoren... BU2523DF , BU2523DX , BU2525DF , BU2525DW , BU2525DX , BU2527DF , 2DA2018 , 2DB1119S , 9015 , 2DB1386R , 2DB1424R , 2DB1689 , 2DB1697 , 2DB1713 , 2DD1621T , 2DD2098R , 2DD2150R .

 


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BJT BCP69T1G | BCP68T1G | BCP56T3G | BCP56T1G | BCP56-16T3G | BCP56-16T1G | BCP5616Q | BCP56-10T3G | BCP56-10T1G | BCP53T1G | BCP53-16T3G | BCP53-16T1G | BCP5316Q | BCP53-10T1G | BCP3904 | BCM857DS | BCM857BV | BCM857BS | BCM856DS | BCM856BS |