Alle Transistoren. RN1965FS Datenblatt

 

RN1965FS . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: RN1965FS

Markierungscode: J4

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Ptot): 0.05 W

Kollektor-Basis-Sperrspannung (Vcb): 20 V

Kollektor-Emitter-Sperrspannung (Vce): 20 V

Emitter-Basis-Sperrspannung (Veb): 5 V

Kollektorstrom (Ic): 0.05 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Kollektor-Kapazität (Cc): 1.2 pF

Kurzschluss-Stromverstärkung (hfe): 120

Transistorgehäuse: SOT963_fS6

Ersatz (vergleichstyp) für RN1965FS

 

RN1965FS Datasheet (PDF)

1.1. rn1961fs rn1962fs rn1963fs rn1964fs rn1965fs rn1966fs.pdf Size:130K _toshiba

RN1965FS
RN1965FS

RN1961FS~RN1966FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FS,RN1962FS,RN1963FS RN1964FS,RN1965FS,RN1966FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications 1.00.05 0.80.05 0.10.05 0.10.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 1 6 Inc

5.1. rn1967ct rn1968ct rn1969ct.pdf Size:145K _update

RN1965FS
RN1965FS

RN1967CT~RN1969CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967CT,RN1968CT,RN1969CT Switching Applications Unit: mm 1.0±0.05 Inverter Circuit Applications 0.15±0.03 Interface Circuit Applications 6 5 4 Driver Circuit Applications 1 2 3 • Two devices are incorporated into a fine pitch Small Mold (6 pin)

5.2. rn1961-rn1966.pdf Size:143K _toshiba

RN1965FS
RN1965FS

RN1961~RN1966 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1961,RN1962,RN1963 RN1964,RN1965,RN1966 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

5.3. rn1961fe-rn1966fe.pdf Size:193K _toshiba

RN1965FS
RN1965FS

RN1961FE~RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FE,RN1962FE,RN1963FE RN1964FE,RN1965FE,RN1966FE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor r

5.4. rn1961ct rn1966ct 090414.pdf Size:191K _toshiba

RN1965FS
RN1965FS

RN1961CT~RN1966CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961CT,RN1962CT,RN1963CT RN1964CT,RN1965CT,RN1966CT Switching Applications Unit: mm Inverter Circuit Applications 1.00.05 0.150.03 Interface Circuit Applications Driver Circuit Applications 6 5 4 Two devices are incorporated into a fine pitch Small Mold (6 pi

5.5. rn1967fe-rn1969fe.pdf Size:147K _toshiba

RN1965FS
RN1965FS

RN1967FE~RN1969FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967FE,RN1968FE,RN1969FE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducin

5.6. rn1967-rn1969.pdf Size:136K _toshiba

RN1965FS
RN1965FS

RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1967,RN1968,RN1969 Unit:mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN296

5.7. rn1967fs rn1968fs rn1969fs.pdf Size:107K _toshiba

RN1965FS
RN1965FS

RN1967FS~RN1969FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967FS,RN1968FS,RN1969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.00.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) 0.80.05 0.10.05 0.10.05 package. Incorporating a bias resistor into a

5.8. rn1961fe rn1966fe 100520.pdf Size:544K _toshiba

RN1965FS
RN1965FS

RN1961FE~RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FE,RN1962FE,RN1963FE RN1964FE,RN1965FE,RN1966FE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor r

Anderen transistoren... RN1963FS , RN1963 , RN1964CT , RN1964FE , RN1964FS , RN1964 , RN1965CT , RN1965FE , BD139 , RN1965 , RN1966CT , RN1966FE , RN1966FS , RN1966 , RN1967CT , RN1967FE , RN1967FS .

 


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