Alle Transistoren. RN2132MFV Datenblatt

 

RN2132MFV . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: RN2132MFV

Markierungscode: Y4.

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Ptot): 0.15 W

Kollektor-Basis-Sperrspannung (Vcb): 50 V

Kollektor-Emitter-Sperrspannung (Vce): 50 V

Emitter-Basis-Sperrspannung (Veb): 5 V

Kollektorstrom (Ic): 0.1 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Kollektor-Kapazität (Cc): 0.9 pF

Kurzschluss-Stromverstärkung (hfe): 120

Transistorgehäuse: SOT723_VESM

Ersatz (vergleichstyp) für RN2132MFV

 

RN2132MFV Datasheet (PDF)

1.1. rn2131mfv rn2132mfv.pdf Size:165K _toshiba

RN2132MFV
RN2132MFV

RN2131MFV,RN2132MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2131MFV,RN2132MFV Unit : mm Switching Applications Inverter Circuit Applications Interface Circuit Applications 1.20.05 Driver Circuit Applications 0.80.05 With built-in bias resistors 1 Simplify circuit design 2 3 Reduce a quantity of parts and manufacturing process Complement

5.1. rn2130mfv.pdf Size:153K _toshiba

RN2132MFV
RN2132MFV

RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2130MFV Switching Applications Unit : mm Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 1.20.05 With built-in bias resistors 0.80.05 Simplify circuit design Reduce a quantity of parts and manufacturing process 1

Anderen transistoren... RN2117 , RN2118FT , RN2118F , RN2118MFV , RN2118 , RN2119MFV , RN2130MFV , RN2131MFV , 9014 , RN2301 , RN2302 , RN2303 , RN2304 , RN2305 , RN2306 , RN2307 , RN2308 .

 


RN2132MFV
  RN2132MFV
  RN2132MFV
  RN2132MFV
 
RN2132MFV
  RN2132MFV
  RN2132MFV
 

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