Alle Transistoren. RN2510 Datenblatt

 

RN2510 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: RN2510

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Ptot): 0.3 W

Kollektor-Basis-Sperrspannung (Vcb): 50 V

Kollektor-Emitter-Sperrspannung (Vce): 50 V

Emitter-Basis-Sperrspannung (Veb): 5 V

Kollektorstrom (Ic): 0.1 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Transitfrequenz (ft): 250 MHz

Kollektor-Kapazität (Cc): 3 pF

Kurzschluss-Stromverstärkung (hfe): 120

Transistorgehäuse: SOT25_SC74A_SMV

Ersatz (vergleichstyp) für RN2510

 

RN2510 Datasheet (PDF)

1.1. rn2510-rn2511.pdf Size:112K _toshiba

RN2510
RN2510

RN2510,RN2511 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2510,RN2511 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including twodevices in SMV (super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1510, RN151

Anderen transistoren... RN2502 , RN2503 , RN2504 , RN2505 , RN2506 , RN2507 , RN2508 , RN2509 , BC556 , RN2511 , RN2601 , RN2602 , RN2603 , RN2604 , RN2605 , RN2606 , RN2607 .

 


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