Alle Transistoren. RN2605 Datenblatt

 

RN2605 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: RN2605

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Ptot): 0.3 W

Kollektor-Basis-Sperrspannung (Vcb): 50 V

Kollektor-Emitter-Sperrspannung (Vce): 50 V

Emitter-Basis-Sperrspannung (Veb): 5 V

Kollektorstrom (Ic): 0.1 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Transitfrequenz (ft): 200 MHz

Kollektor-Kapazität (Cc): 3 pF

Kurzschluss-Stromverstärkung (hfe): 80

Transistorgehäuse: SOT26_SC74_SM6

Ersatz (vergleichstyp) für RN2605

 

RN2605 Datasheet (PDF)

5.1. rn2601-rn2606.pdf Size:154K _toshiba

RN2605
RN2605

RN2601~RN2606 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2601,RN2602,RN2603 RN2604,RN2605,RN2606 Switching, Inverter Circuit, Interface Circuit Unit in mm And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

5.2. rn2607-rn2609.pdf Size:145K _toshiba

RN2605
RN2605

RN2607~RN2609 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2607,RN2608,RN2609 Switching, Inverter Circuit, Interface Circuit Unit in mm And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1

Anderen transistoren... RN2508 , RN2509 , RN2510 , RN2511 , RN2601 , RN2602 , RN2603 , RN2604 , S9018 , RN2606 , RN2607 , RN2608 , RN2610 , RN2611 , RN2701JE , RN2701 , RN2702JE .

 


RN2605
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RN2605
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