Alle Transistoren. RN47A3JE Datenblatt

 

RN47A3JE . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: RN47A3JE

Markierungscode: 23

Werkstoff: Si

Polarity: NPN*PNP

Gesamt-Verlustleistung (Ptot): 0.1 W

Kollektor-Basis-Sperrspannung (Vcb): 50 V

Kollektor-Emitter-Sperrspannung (Vce): 50 V

Emitter-Basis-Sperrspannung (Veb): 10 V

Kollektorstrom (Ic): 0.1 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Transitfrequenz (ft): 200 MHz

Kollektor-Kapazität (Cc): 3 pF

Kurzschluss-Stromverstärkung (hfe): 50

Transistorgehäuse: SOT553_ESV

Ersatz (vergleichstyp) für RN47A3JE

 

RN47A3JE Datasheet (PDF)

1.1. rn47a3je 071101.pdf Size:286K _toshiba

RN47A3JE
RN47A3JE

RN47A3JE TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN47A3JE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enab

4.1. rn47a3.pdf Size:107K _toshiba

RN47A3JE
RN47A3JE

RN47A3 TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A3 Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables th

5.1. rn47a5je 071101.pdf Size:266K _toshiba

RN47A3JE
RN47A3JE

RN47A5JE TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN47A5JE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enab

5.2. rn47a7je 090423.pdf Size:222K _toshiba

RN47A3JE
RN47A3JE

RN47A7JE TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A7JE Switching Applications Unit: mm Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts c

5.3. rn47a4je 071101.pdf Size:289K _toshiba

RN47A3JE
RN47A3JE

RN47A4JE TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN47A4JE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enab

5.4. rn47a2je 071101.pdf Size:290K _toshiba

RN47A3JE
RN47A3JE

RN47A2JE TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN47A2JE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enab

5.5. rn47a4.pdf Size:107K _toshiba

RN47A3JE
RN47A3JE

RN47A4 TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A4 Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables th

5.6. rn47a1.pdf Size:105K _toshiba

RN47A3JE
RN47A3JE

RN47A1 TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A1 Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the

5.7. rn47a5.pdf Size:107K _toshiba

RN47A3JE
RN47A3JE

RN47A5 TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A5 Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables th

5.8. rn47a6 071101.pdf Size:139K _toshiba

RN47A3JE
RN47A3JE

RN47A6 TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A6 Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables th

5.9. rn47a1je 071101.pdf Size:291K _toshiba

RN47A3JE
RN47A3JE

RN47A1JE TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN47A1JE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count

5.10. rn47a2.pdf Size:107K _toshiba

RN47A3JE
RN47A3JE

RN47A2 TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A2 Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications. Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables t

Anderen transistoren... RN4610 , RN4611 , RN4612 , RN46A1 , RN47A1JE , RN47A1 , RN47A2JE , RN47A2 , 2SC1815 , RN47A3 , RN47A4JE , RN47A4 , RN47A5JE , RN47A5 , RN47A6 , RN47A7JE , RN4901FE .

 


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