Alle Transistoren. 2SA1934 Datenblatt

 

2SA1934 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2SA1934

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Ptot): 1.8 W

Kollektor-Basis-Sperrspannung (Vcb): 100 V

Kollektor-Emitter-Sperrspannung (Vce): 80 V

Emitter-Basis-Sperrspannung (Veb): 7 V

Kollektorstrom (Ic): 5 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Transitfrequenz (ft): 60 MHz

Kollektor-Kapazität (Cc): 200 pF

Kurzschluss-Stromverstärkung (hfe): 70

Transistorgehäuse: TPL

Ersatz (vergleichstyp) für 2SA1934

 

2SA1934 Datasheet (PDF)

1.1. 2sa1934.pdf Size:236K _toshiba

2SA1934
2SA1934

4.1. 2sa1930i 3ca1930i.pdf Size:252K _update

2SA1934
2SA1934

2SA1930I(3CA1930I) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于一般功率放大和驱动级放大。 Purpose: General power and driver stage amplifier applications. 特点:特征频率高,与 2SC5171I(3DA5171I)互补。 Features: High f , complementary pair with 2SC5171I(3DA5171I). T 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位

4.2. 2sa1930 3ca1930.pdf Size:312K _update

2SA1934
2SA1934

2SA1930(3CA1930) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于一般功率放大和驱动级放大。 Purpose: General power and driver stage amplifier applications. 特点:特征频率高,与 2SC5171(3DA5171)互补。 Features: High f , complementary pair with 2SC5171(3DA5171). T 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Sym

4.3. 2sa1930s 3ca1930s.pdf Size:248K _update

2SA1934
2SA1934

2SA1930S(3CA1930S) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于一般功率放大和驱动级放大。 Purpose: General power and driver stage amplifier applications. 特点:特征频率高,与 2SC5171S(3DA5171S)互补。 Features: High f , complementary pair with 2SC5171S(3DA5171S). T 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位

4.4. 2sa1930s.pdf Size:239K _update

2SA1934
2SA1934

2SA1930S(3CA1930S) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于一般功率放大和驱动级放大。 Purpose: General power and driver stage amplifier applications. 特点:特征频率高,与 2SC5171S(3DA5171S)互补。 Features: High f , complementary pair with 2SC5171S(3DA5171S). T 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位

4.5. 2sa1931.pdf Size:126K _toshiba

2SA1934
2SA1934

2SA1931 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS) 2SA1931 High-Current Switching Applications Unit: mm Low saturation voltage: VCE (sat) = -0.4 V (max) High-speed switching time: tstg = 1.0 ?s (typ.) Complementary to 2SC4881 Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage

4.6. 2sa1939.pdf Size:170K _toshiba

2SA1934
2SA1934

4.7. 2sa1930.pdf Size:119K _toshiba

2SA1934
2SA1934

2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications High transition frequency: fT = 200 MHz (typ.) Complementary to 2SC5171 Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -180 V Collector-emitter voltage VCEO -180 V Emitter-base voltage V

4.8. 2sa1932.pdf Size:197K _toshiba

2SA1934
2SA1934

4.9. 2sa1933.pdf Size:181K _toshiba

2SA1934
2SA1934

4.10. 2sa1937.pdf Size:194K _toshiba

2SA1934
2SA1934

2SA1937 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High Voltage Switching Applications Unit: mm High voltage: VCEO = -600 V Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -600 V Collector-emitter voltage VCEO -600 V Emitter-base voltage VEBO -7 V DC IC -0.5 Collector current A Pulse ICP -1 Base current IB -0.25

4.11. 2sa1939.pdf Size:24K _wingshing

2SA1934

2SA1939 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC5196 ABSOLUTE MAXIMUM RATING (Ta=25c c) c c Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -80 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -6 A Collector

4.12. 2sa1939.pdf Size:231K _jmnic

2SA1934
2SA1934

JMnic Product Specification Silicon PNP Power Transistors 2SA1939 DESCRIPTION · ·With TO-3P(I) package ·Complement to type 2SC5196 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

4.13. 2sa1939.pdf Size:168K _inchange_semiconductor

2SA1934
2SA1934

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1939 DESCRIPTION · ·With TO-3P(I) package ·Complement to type 2SC5196 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P

4.14. 2sa1930i.pdf Size:482K _blue-rocket-elect

2SA1934
2SA1934

2SA1930I(BR3CA1930I) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-251 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-251 Plastic Package. 特征 / Features 特征频率高,与 2SC5171I(BR3DA5171I)互补。 High fT, complementary pair with 2SC5171I(BR3DA5171I). 用途 / Applications 用于一般功率放大和驱动级放大。 General power and d

Anderen transistoren... 2SA1923 , 2SA1924 , 2SA1925 , 2SA1926 , 2SA1930 , 2SA1931 , 2SA1932 , 2SA1933 , A1015 , 2SA1937 , 2SA1939 , 2SA1940 , 2SA1941 , 2SA1942 , 2SA1962 , 2SA1971 , 2SA1972 .

 


2SA1934
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2SA1934
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