Alle Transistoren. 2SA2066 Datenblatt

 

2SA2066 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2SA2066

Markierungscode: 4E

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Ptot): 1 W

Kollektor-Basis-Sperrspannung (Vcb): 20 V

Kollektor-Emitter-Sperrspannung (Vce): 10 V

Emitter-Basis-Sperrspannung (Veb): 7 V

Kollektorstrom (Ic): 2 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Kurzschluss-Stromverstärkung (hfe): 200

Transistorgehäuse: PW-MINI_SC62

Ersatz (vergleichstyp) für 2SA2066

 

2SA2066 Datasheet (PDF)

1.1. 2sa2066.pdf Size:201K _toshiba

2SA2066
2SA2066

2SA2066 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2066 High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 200 to 500 (I = -0.2 A) C Low collector-emitter saturation voltage: V = -0.19 V (max) CE (sat) High-speed switching: t = 25 ns (typ.) f Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collecto

4.1. 2sa2061.pdf Size:169K _toshiba

2SA2066
2SA2066

2SA2061 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2061 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (I = 0.5 A) C Low collector-emitter saturation voltage: V = -0.19 V (max) CE (sat) High-speed switching: t = 40 ns (typ.) f Maximum Ratings (Ta = 25C) Characteristics Symbol

4.2. 2sa2065.pdf Size:194K _toshiba

2SA2066
2SA2066

2SA2065 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2065 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (I = -0.15 A) C Low collector-emitter saturation voltage: V = -0.14 V (max) CE (sat) High-speed switching: t = 37 ns (typ.) f Maximum Ratings (Ta = 25C) Characteristics Symbo

4.3. 2sa2060.pdf Size:195K _toshiba

2SA2066
2SA2066

2SA2060 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2060 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (I = -0.5 A) C Low collector-emitter saturation voltage: V = -0.2 V (max) CE (sat) High-speed switching: t = 90 ns (typ.) f Maximum Ratings (Ta = 25C) Characteristics Symbol

4.4. 2sa2069.pdf Size:196K _toshiba

2SA2066
2SA2066

2SA2069 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2069 High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 200 to 500 (I = -0.15 A) C Low collector-emitter saturation voltage: V = -0.14 V (max) CE (sat) High-speed switching: t = 37 ns (typ.) f Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collect

4.5. 2sa2062.pdf Size:29K _sanyo

2SA2066
2SA2066

Ordering number : ENN6987 2SA2062 / 2SC5774 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2062 / 2SC5774 140V / 10A, AF 70W Output Applications Features Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2062 / 2SC5774] 15.6 3.2 4.8 14.0 2.0 1.6

4.6. 2sa2063.pdf Size:29K _sanyo

2SA2066
2SA2066

Ordering number : ENN6988 2SA2063 / 2SC5775 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2063 / 2SC5775 160V / 12A, AF90W Output Applications Features Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2063 / 2SC5775] 15.6 3.2 4.8 14.0 2.0 1.6

4.7. 2sa2064.pdf Size:78K _panasonic

2SA2066
2SA2066

Power Transistors 2SA2064 Silicon PNP epitaxial planar type Unit: mm 4.60.2 Power supply for audio & visual equipments 9.90.3 2.90.2 such as TVs and VCRs Industrial equipments such as DC-DC converters ? 3.20.1 Features High speed switching (tstg: storage time/tf: fall time is short) Low collector-emitter saturation voltage VCE(sat) 1.40.2 2.60.1 1.60.2 Superior forwa

4.8. 2sa2067.pdf Size:74K _panasonic

2SA2066
2SA2066

Power Transistors 2SA2067 Silicon PNP epitaxial planar type Unit: mm Power supply for audio & visual equipments 10.00.2 5.00.1 1.00.2 such as TVs and VCRs Industrial equipments such as DC-DC converters Features 1.20.1 High speed switching (tstg: storage time/tf: fall time is short) C 1.0 1.480.2 Low collector-emitter saturation voltage VCE(sat) 2.250.2 Superior forwar

4.9. st2sa2060u.pdf Size:796K _semtech

2SA2066
2SA2066

ST 2SA2060U PNP Silicon Epitaxial Planar Transistor for high speed switching, DC-DC converter and strobe applications Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 7 V Collector Current (DC) -IC 2 A Collector Current (Pulse) -ICP 3.5 A Base Current -IB 200 mA 0.

4.10. 2sa2061.pdf Size:1040K _kexin

2SA2066
2SA2066

SMD Type Transistors PNP Transistors 2SA2061 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=-2.5A 1 2 ● Collector Emitter Voltage VCEO=-20V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Co

4.11. 2sa2060.pdf Size:1244K _kexin

2SA2066
2SA2066

SMD Type Transistors PNP Transistors 2SA2060 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=-2A ● Collector Emitter Voltage VCEO=-50V ● High-Speed Switching Applications 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Volt

Anderen transistoren... 2SA1987 , 2SA2034 , 2SA2056 , 2SA2058 , 2SA2059 , 2SA2060 , 2SA2061 , 2SA2065 , BC109C , 2SA2069 , 2SA2070 , 2SA2097 , 2SA2120 , 2SA2121 , 2SA2142 , 2SA2182 , 2SA2183 .

 


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