Alle Transistoren. KRX104E Datenblatt

 

KRX104E . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: KRX104E

Werkstoff: Si

Polarity: NPN*PNP

Gesamt-Verlustleistung (Ptot): 0.2 W

Kollektor-Emitter-Sperrspannung (Vce): 50 V

Kollektorstrom (Ic): 0.1 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Transitfrequenz (ft): 200(250) MHz

Kurzschluss-Stromverstärkung (hfe): 80(30)

Transistorgehäuse: TESV

Ersatz (vergleichstyp) für KRX104E

 

KRX104E Datasheet (PDF)

1.1. krx104e.pdf Size:46K _kec

KRX104E
KRX104E

KRX104E SEMICONDUCTOR EPITAXIAL PLANAR NPN/PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TESV. (Thin Extreme Super mini type with 5 pin.) 1 5 DIM MILLIMETERS _ A 1.6 0.05 + With Built-in bias resistors. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 Simplify circuit design. _ + B1 1.2 0.0

4.1. krx104u.pdf Size:384K _kec

KRX104E
KRX104E

KRX104U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 ·Including two devices in USV. 1 5 DIM MILLIMETERS _ (Ultra Super mini type with 5 leads.) A 2.00 + 0.20 2 _ A1 1.3 + 0.1 ·With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 ·Simplify circuit design.

5.1. krx102f.pdf Size:366K _kec

KRX104E
KRX104E

KRX102F SEMICONDUCTOR EPITAXIAL PLANAR NPN/PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. B INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B1 FEATURES 1 5 Including two devices in TFSV. DIM MILLIMETERS (Thin Fine Pitch Super mini 5pin Package.) 2 _ + A 1.0 0.05 _ + A1 0.7 0.05 With Built-in bias resistors. _ + B 1.0 0.05 3 _ Simplify circuit design. 4 + B1 0.8

5.2. krx102e.pdf Size:46K _kec

KRX104E
KRX104E

KRX102E SEMICONDUCTOR EPITAXIAL PLANAR NPN/PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TESV. (Thin Extreme Super mini type with 5 pin.) 1 5 DIM MILLIMETERS _ A 1.6 0.05 + With Built-in bias resistors. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 Simplify circuit design. _ + B1 1.2 0.0

5.3. krx101u.pdf Size:47K _kec

KRX104E
KRX104E

KRX101U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in USV. 1 5 DIM MILLIMETERS _ (Ultra Super mini type with 5 leads.) A 2.00 + 0.20 2 _ A1 1.3 + 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Simplify circuit design. C 0.

5.4. krx103e.pdf Size:46K _kec

KRX104E
KRX104E

KRX103E SEMICONDUCTOR EPITAXIAL PLANAR NPN/PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TESV. (Thin Extreme Super mini type with 5 pin.) 1 5 DIM MILLIMETERS _ A 1.6 0.05 + With Built-in bias resistors. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 Simplify circuit design. _ + B1 1.2 0.0

5.5. krx101e.pdf Size:46K _kec

KRX104E
KRX104E

KRX101E SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TESV. (Thin Extereme Super mini type with 5 pin.) 1 5 DIM MILLIMETERS _ A 1.6 0.05 + With Built-in bias resistors. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 Simplify circuit design. _ + B1 1.2 0.0

5.6. krx105e.pdf Size:378K _kec

KRX104E
KRX104E

KRX105E SEMICONDUCTOR EPITAXIAL PLANAR NPN/PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ·Including two devices in TESV. (Thin Extreme Super mini type with 5 pin.) 1 5 DIM MILLIMETERS _ A 1.6 0.05 + ·With Built-in bias resistors. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 ·Simplify circuit design. _ + B1 1

5.7. krx103u.pdf Size:44K _kec

KRX104E
KRX104E

KRX103U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 ·Including two devices in USV. 1 5 DIM MILLIMETERS _ (Ultra Super mini type with 5 leads.) A 2.00 + 0.20 2 _ A1 1.3 + 0.1 ·With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 ·Simplify circuit design.

5.8. krx105u.pdf Size:378K _kec

KRX104E
KRX104E

KRX105U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 ·Including two devices in USV. 1 5 DIM MILLIMETERS _ (Ultra Super mini type with 5 leads.) A 2.00 + 0.20 2 _ A1 1.3 + 0.1 ·With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 ·Simplify circuit design.

5.9. krx102u.pdf Size:44K _kec

KRX104E
KRX104E

KRX102U SEMICONDUCTOR EPITAXIAL PLANAR NPN/PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 ·Including two devices in USV. 1 5 DIM MILLIMETERS _ (Ultra Super mini type with 5 leads.) A 2.00 + 0.20 2 _ A1 1.3 + 0.1 ·With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 ·Simplify circuit design.

Anderen transistoren... KRC886T , KRX101E , KRX101U , KRX102E , KRX102F , KRX102U , KRX103E , KRX103U , B772 , KRX104U , KRX105E , KRX105U , KRX201E , KRX201U , KRX202E , KRX202U , KRX203E .

 


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