Alle Transistoren. KRC110 Datenblatt

 

KRC110 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: KRC110

Werkstoff: Si

Wandlerpolarität: Pre-Biased-NPN

Basis-Eingangswiderstand R1 = 4.7 kOhm

Gesamt-Verlustleistung (Pc): 0.625 W

Kollektor-Basis-Sperrspannung (Vcb): 50 V

Kollektor-Emitter-Sperrspannung (Vce): 50 V

Emitter-Basis-Sperrspannung (Veb): 5 V

DC-Kollektorstrom (Ic): 0.1 A

Betriebstemperatur (Tj): 150 °C

Transitfrequenz (ft): 250 MHz

DC-Stromverstärkung (hfe): 120

Transistorgehäuse: TO-92

Ersatz (vergleichstyp) für KRC110

 

KRC110 Datasheet (PDF)

1.1. krc110m-krc114m.pdf Size:391K _kec

KRC110
KRC110

SEMICONDUCTOR KRC110M~KRC114M EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. DIM MILLIMETERS O A 3.20 MAX ·Reduce a Quantity of Parts and Manufacturing Process. H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.

1.2. krc110-krc114.pdf Size:47K _kec

KRC110
KRC110

SEMICONDUCTOR KRC110~KRC114 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B C FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. ·Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 EQUIVALENT CIRCUIT

 1.3. krc110s-krc114s.pdf Size:393K _kec

KRC110
KRC110

SEMICONDUCTOR KRC110S~KRC114S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS ·With Built-in Bias Resistors. _ + A 2.93 0.20 B 1.30+0.20/-0.15 ·Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 ·Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/-

1.4. krc110s-114s.pdf Size:812K _kexin

KRC110
KRC110

SMD Type Transistors NPN Transistors KRC110S ~ KRC114S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● With Built in Bias Resistors ● Simplify Circuit Design 1 2 ● Reduce a Quantity of Parts and Manufaturing Process +0.1 +0.05 0.95-0.1 0.1 -0.01 1.9+0.1 -0.1 ● Digital Transistors 1.Base C 2.Emitter 3.collector R1 B E ■ Absolute Maximum Ratin

Anderen transistoren... 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 
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