Alle Transistoren. KRC111 Datenblatt

 

KRC111 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: KRC111

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Ptot): 0.625 W

Kollektor-Basis-Sperrspannung (Vcb): 50 V

Kollektor-Emitter-Sperrspannung (Vce): 50 V

Emitter-Basis-Sperrspannung (Veb): 5 V

Kollektorstrom (Ic): 0.1 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Transitfrequenz (ft): 250 MHz

Kurzschluss-Stromverstärkung (hfe): 120

Transistorgehäuse: TO-92

Ersatz (vergleichstyp) für KRC111

 

KRC111 Datasheet (PDF)

5.1. krc116s 122s.pdf Size:428K _kec

KRC111
KRC111

SEMICONDUCTOR KRC116S~KRC122S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E L B L FEATURES DIM MILLIMETERS _ + A 2.93 0.20 ·With Built-in Bias Resistors. B 1.30+0.20/-0.15 ·Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 ·Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/-0.20

5.2. krc110m-114m.pdf Size:391K _kec

KRC111
KRC111

SEMICONDUCTOR KRC110M~KRC114M EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. DIM MILLIMETERS O A 3.20 MAX ·Reduce a Quantity of Parts and Manufacturing Process. H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00

5.3. krc110 4s.pdf Size:393K _kec

KRC111
KRC111

SEMICONDUCTOR KRC110S~KRC114S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS ·With Built-in Bias Resistors. _ + A 2.93 0.20 B 1.30+0.20/-0.15 ·Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 ·Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/-0.2

5.4. krc119m.pdf Size:437K _kec

KRC111
KRC111

SEMICONDUCTOR KRC116M~KRC122M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B FEATURES ·With Built-in Bias Resistors. DIM MILLIMETERS O ·Simplify Circuit Design. A 3.20 MAX H M B 4.30 MAX ·Reduce a Quantity of Parts and Manufacturing Process. C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50

5.5. krc119s.pdf Size:349K _kec

KRC111
KRC111

SEMICONDUCTOR KRC119S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES E ·With Built-in Bias Resistors. L B L DIM MILLIMETERS ·Simplify Circuit Design. _ + A 2.93 0.20 B 1.30+0.20/-0.15 ·Reduce a Quantity of Parts and Manufacturing Process. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.9

5.6. krc116m.pdf Size:437K _kec

KRC111
KRC111

SEMICONDUCTOR KRC116M~KRC122M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B FEATURES ·With Built-in Bias Resistors. DIM MILLIMETERS O ·Simplify Circuit Design. A 3.20 MAX H M B 4.30 MAX ·Reduce a Quantity of Parts and Manufacturing Process. C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50

5.7. krc118m.pdf Size:437K _kec

KRC111
KRC111

SEMICONDUCTOR KRC116M~KRC122M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B FEATURES ·With Built-in Bias Resistors. DIM MILLIMETERS O ·Simplify Circuit Design. A 3.20 MAX H M B 4.30 MAX ·Reduce a Quantity of Parts and Manufacturing Process. C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50

5.8. krc110-114.pdf Size:47K _kec

KRC111
KRC111

SEMICONDUCTOR KRC110~KRC114 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B C FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. ·Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 EQUIVALENT CIRCUIT G

5.9. krc116-122.pdf Size:404K _kec

KRC111
KRC111

SEMICONDUCTOR KRC116~KRC122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B C FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. ·Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ H J 1

5.10. krc116s-122s.pdf Size:853K _kexin

KRC111
KRC111

SMD Type Transistors NPN Transistors KRC116S ~ KRC122S SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● With Built in Bias Resistors ● Simplify Circuit Design 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 ● Reduce a Quantity of Parts and Manufaturing Process +0.1 1.9-0.1 ● Digital Transistors 1.IN 2.Common 3.OUT OUT R1 IN R2 COMMON ■ Absolute Maximum Rat

5.11. krc110s-114s.pdf Size:812K _kexin

KRC111
KRC111

SMD Type Transistors NPN Transistors KRC110S ~ KRC114S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● With Built in Bias Resistors ● Simplify Circuit Design 1 2 ● Reduce a Quantity of Parts and Manufaturing Process +0.1 +0.05 0.95-0.1 0.1 -0.01 1.9+0.1 -0.1 ● Digital Transistors 1.Base C 2.Emitter 3.collector R1 B E ■ Absolute Maximum Ratin

Anderen transistoren... KTA1271A , KTA2013F , KTA2014F , KTC3544S , KTC8550A , KTC9015A , KRC110 , KRC110M , SS8050 , KRC111M , KRC112 , KRC112M , KRC113 , KRC113M , KRC114 , KRC114M , KRC160F .

 


KRC111
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KRC111
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