Alle Transistoren. KRC234M Datenblatt

 

KRC234M . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: KRC234M

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Ptot): 0.4 W

Kollektor-Basis-Sperrspannung (Vcb): 30 V

Kollektor-Emitter-Sperrspannung (Vce): 15 V

Emitter-Basis-Sperrspannung (Veb): 5 V

Kollektorstrom (Ic): 0.6 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Transitfrequenz (ft): 200 MHz

Kurzschluss-Stromverstärkung (hfe): 200

Transistorgehäuse: TO-92M

Ersatz (vergleichstyp) für KRC234M

 

KRC234M Datasheet (PDF)

1.1. krc234m.pdf Size:484K _kec

KRC234M
KRC234M

SEMICONDUCTOR KRC231M~KRC235M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER B CIRCUIT APPLICATION. DIM MILLIMETERS O FEATURES A 3.20 MAX H M B 4.30 MAX ·With Built-in Bias Resistors. C 0.55 MAX _ ·Simplify Circuit Design. D 2.40 + 0.15 E 1.27 ·Reduce a Quantity of Parts and Manufacturing Process.

5.1. krc231m.pdf Size:484K _kec

KRC234M
KRC234M

SEMICONDUCTOR KRC231M~KRC235M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER B CIRCUIT APPLICATION. DIM MILLIMETERS O FEATURES A 3.20 MAX H M B 4.30 MAX ·With Built-in Bias Resistors. C 0.55 MAX _ ·Simplify Circuit Design. D 2.40 + 0.15 E 1.27 ·Reduce a Quantity of Parts and Manufacturing Process.

5.2. krc231 5m.pdf Size:73K _kec

KRC234M
KRC234M

SEMICONDUCTOR KRC231M~KRC235M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER B CIRCUIT APPLICATION. DIM MILLIMETERS O FEATURES A 3.20 MAX H M B 4.30 MAX With Built-in Bias Resistors. C 0.55 MAX _ Simplify Circuit Design. D 2.40 + 0.15 E 1.27 Reduce a Quantity of Parts and Manufacturing Process. F

5.3. krc231 5s.pdf Size:374K _kec

KRC234M
KRC234M

SEMICONDUCTOR KRC231S~KRC235S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER E L B L CIRCUIT APPLICATION. DIM MILLIMETERS _ + A 2.93 0.20 B 1.30+0.20/-0.15 FEATURES C 1.30 MAX 2 3 D 0.40+0.15/-0.05 ·With Built-in Bias Resistors. E 2.40+0.30/-0.20 1 G 1.90 ·Simplify Circuit Design. H 0.95 ·Redu

5.4. krc231s.pdf Size:952K _kexin

KRC234M
KRC234M

SMD Type Transistors NPN Transistors KRC231S ~ KRC235S SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● With Built-in Bias Resistors. C ● Simplify Circuit Design. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 R 1 +0.1 1.9-0.1 B 1.Base 2.Emitter E 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 C

Anderen transistoren... KRC113 , KRC113M , KRC114 , KRC114M , KRC160F , KRC161F , KRC163F , KRC164F , BC237 , KTC3552T , KTC3571S , KTC3572 , KRA110M , KRA111M , KRA114M , KRA119S , KRA160F .

 


KRC234M
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KRC234M
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