Alle Transistoren. KRA224M Datenblatt

 

KRA224M . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: KRA224M

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Ptot): 0.4 W

Kollektor-Emitter-Sperrspannung (Vce): 50 V

Kollektorstrom (Ic): 0.8 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Transitfrequenz (ft): 200 MHz

Kurzschluss-Stromverstärkung (hfe): 56

Transistorgehäuse: TO-92M

Ersatz (vergleichstyp) für KRA224M

 

KRA224M Datasheet (PDF)

5.1. kra221s.pdf Size:1087K _kec

KRA224M
KRA224M

SEMICONDUCTOR KRA221S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E ·With Built-in Bias Resistors. L B L DIM MILLIMETERS ·Simplify Circuit Design. _ + A 2.93 0.20 B 1.30+0.20/-0.15 ·Reduce a Quantity of Parts and Manufacturing Process. C 1.30 MAX 2 ·High Output Current :-800mA.

5.2. kra222 226m.pdf Size:417K _kec

KRA224M
KRA224M

SEMICONDUCTOR KRA221M~KRA226M TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES ·With Built-in Bias Resistors. DIM MILLIMETERS O ·Simplify Circuit Design. A 3.20 MAX H M B 4.30 MAX ·Reduce a Quantity of Parts and Manufacturing Process. C 0.55 MAX ·High Output Current :-800mA. _ D 2.

5.3. kra221 6m.pdf Size:76K _kec

KRA224M
KRA224M

SEMICONDUCTOR KRA221M~KRA226M TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES With Built-in Bias Resistors. DIM MILLIMETERS O Simplify Circuit Design. A 3.20 MAX H M B 4.30 MAX Reduce a Quantity of Parts and Manufacturing Process. C 0.55 MAX _ D 2.40 + 0.15 High Output Current :-800m

5.4. kra221-226.pdf Size:65K _kec

KRA224M
KRA224M

SEMICONDUCTOR KRA221~KRA226 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B C FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. ·Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX E K ·High Output Current :-800mA. B 4.80 MAX G C 3.70 MAX D

5.5. kra222 26s.pdf Size:382K _kec

KRA224M
KRA224M

SEMICONDUCTOR KRA222S~KRA226S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E ·With Built-in Bias Resistors. L B L DIM MILLIMETERS ·Simplify Circuit Design. _ + A 2.93 0.20 B 1.30+0.20/-0.15 ·Reduce a Quantity of Parts and Manufacturing Process. C 1.30 MAX 2 ·High Output Current :

Anderen transistoren... KRA118M , KRA119M , KRA152F , KRA153F , KRA158F , KRA159F , KRA222M , KRA223M , BC107 , KRA225M , KRA226M , KRC101 , KRC101M , KRC102 , KRC102M , KRC103 , KRC103M .

 


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