Alle Transistoren. 2N1201 Datenblatt

 

2N1201 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2N1201

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Ptot): 0.15 W

Kollektor-Basis-Sperrspannung (Vcb): 20 V

Kollektor-Emitter-Sperrspannung (Vce): 14 V

Emitter-Basis-Sperrspannung (Veb): 1 V

Kollektorstrom (Ic): 0.05 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Transitfrequenz (ft): 30 MHz

Kollektor-Kapazität (Cc): 3.5 pF

Kurzschluss-Stromverstärkung (hfe): 7

Transistorgehäuse: TO9

Ersatz (vergleichstyp) für 2N1201

 

2N1201 Datasheet (PDF)

5.1. mgw12n120d.pdf Size:213K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW12N120D/D Designer's? Data Sheet MGW12N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode NChannel EnhancementMode Silicon Gate IGBT & DIODE IN TO247 12 A @ 90C This Insulated Gate Bipolar Transistor (IGBT) is copackaged 20 A @ 25C with a soft recovery ultrafast rectifier and

5.2. mtv12n120d.pdf Size:107K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGV12N120D/D Product Preview Data Sheet MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode NChannel Enhancement Mode Silicon Gate IGBT & DIODE IN D3PAK 12 A @ 90C This Insulated Gate Bipolar Transistor (IGBT) is copackaged 20 A @ 25C with a soft recovery ultrafast rectifier and uses an advanced 1200

5.3. mgv12n120d.pdf Size:83K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGV12N120D/D Product Preview Data Sheet MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode NChannel Enhancement Mode Silicon Gate IGBT & DIODE IN D3PAK 12 A @ 90C This Insulated Gate Bipolar Transistor (IGBT) is copackaged 20 A @ 25C with a soft recovery ultrafast rectifier and uses an advanced 1200

5.4. mgw12n120.pdf Size:228K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW12N120/D Designer's? Data Sheet MGW12N120 Insulated Gate Bipolar Transistor Motorola Preferred Device NChannel EnhancementMode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO247 termination scheme to provide an enhanced and reliable high 12 A @ 90C voltageblocking capability. Sh

5.5. mgv12n120drev0.pdf Size:79K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGV12N120D/D Product Preview Data Sheet MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode NChannel Enhancement Mode Silicon Gate IGBT & DIODE IN D3PAK 12 A @ 90C This Insulated Gate Bipolar Transistor (IGBT) is copackaged 20 A @ 25C with a soft recovery ultrafast rectifier and uses an advanced 1200

5.6. mtw12n120d.pdf Size:250K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW12N120D/D Designer's? Data Sheet MGW12N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode NChannel EnhancementMode Silicon Gate IGBT & DIODE IN TO247 12 A @ 90C This Insulated Gate Bipolar Transistor (IGBT) is copackaged 20 A @ 25C with a soft recovery ultrafast rectifier and

5.7. sgw02n120 rev2g.pdf Size:808K _infineon

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SGW02N120 Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: G E - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-247-3-21 Qualified according to JEDEC1 for t

5.8. sgb02n120 rev2 3.pdf Size:433K _infineon

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SGB02N120 Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: G E - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel switching capability Qualified according to JEDEC1 for

5.9. skp02n120 rev2g 2[1].pdf Size:364K _infineon

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SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between C short circuits: >1s. 40lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for: - Motor controls - Inverter - SMPS NPT-Technology offers: PG-TO-220-3-1 - very tight parameter dist

5.10. skb02n120 rev2 3g.pdf Size:1156K _infineon

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SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between C short circuits: >1s. lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology offers: - very tight

5.11. sgp02n120 sgd02n120 sgi02n120 rev2 3g.pdf Size:376K _infineon

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SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: G E - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-3-11 PG-TO-262

5.12. ixgn82n120c3h1.pdf Size:94K _ixys

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Advance Technical Information VCES = 1200V GenX3TM 1200V IXGN82N120C3H1 IC110 = 58A IGBT w/ Diode ? VCE(sat) ? ?? 3.9V ? ? High-Speed PT IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25C to 150C 1200 V G VCGR TJ = 25C to 150C, RGE = 1M? 1200 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25C 130

5.13. ixga12n120a2 ixgp12n120a2.pdf Size:578K _ixys

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IXGA 12N120A2 VCES = 1200 V IGBT IXGP 12N120A2 IC25 = 24 A Optimized for VCE(sat) = 3.0 V switching up to 5KHz Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1200 V TO-220AB (IXGP) VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25C24 A IC90 TC = 90C12 A ICM TC = 25C, 1 ms 48 A TO-2

5.14. ixth12n120.pdf Size:545K _ixys

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VDSS = 1200 V IXTH 12N120 ID (cont) = 12 A Power MOSFET, Avalanche Rated ? ? RDS(on)= 1.4 ? ? ? High Voltage Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C; RGS = 1 M? 1200 V VGS Continuous 30 V D (TAB) VGSM Transient 40 V ID25 TC = 25C12 A IDM TC = 25C, pulse width limited by TJM 48 A IAR 12

5.15. ixgy2n120.pdf Size:128K _ixys

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Preliminary Data Sheet VCES IC90 VCE(SAT) High Voltage IGBT IXGY 2N120 1200 V 2.0 A 3 V TO-252 AA (IXGY) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V G E VGES Continuous 20 V C (TAB) VGEM Transient 30 V G = Gate C = Collector IC25 TC = 25C 5 A E = Emitter TAB = Collector IC90 TC = 90C 2 A ICM TC = 25C, 1 ms

5.16. ixty02n120p ixtp02n120p.pdf Size:123K _ixys

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Advance Technical Information PolarTM VDSS = 1200V IXTP02N120P ID25 = 0.2A Power MOSFET IXTY02N120P ? ? RDS(on) ? ? ? 75? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings G D D (Tab) S VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C, RGS = 1M? 1200 V TO-252 (IXTY) VGSS Continuous 20 V VGSM Transient 30 V G ID2

5.17. ixga12n120a3 ixgp12n120a3 ixgh12n120a3.pdf Size:201K _ixys

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GenX3TM 1200V VCES = 1200V IXGA12N120A3 IGBTs IC90 = 12A IXGP12N120A3 ? ? VCE(sat) ? 3.0V ? ? IXGH12N120A3 High Surge Current TO-263 AA (IXGA) Ultra-Low Vsat PT IGBTs for up to 3kHz Switching G S D (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C, RGE = 1M? 1200 V VGES Continuous 20 V G VGEM Transient 3

5.18. kgt12n120ndh .pdf Size:1079K _kec

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SEMICONDUCTOR KGT12N120NDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES ·High speed switching ·High system efficiency ·Soft current turn-off waveforms ·Extremely enhanced avalanche capability MAXIMUM RATING

5.19. sgw02n120.pdf Size:806K _igbt

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 SGW02N120 Fast IGBT in NPT-technology C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: G E - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-247-3-21 • Qualified according

5.20. ixgk82n120a3.pdf Size:179K _igbt

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Preliminary Technical Information GenX3TM 1200V VCES = 1200V IXGK82N120A3 IC110 = 82A IGBTs IXGX82N120A3 ≤ ≤ VCE(sat) ≤ 2.05V ≤ ≤ Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V G C Tab VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V E E VGES Continuous ±20 V VGEM Transient ±3

5.21. skb02n120.pdf Size:1151K _igbt

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 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between C short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners • NPT-Technology offers:

5.22. skp02n120.pdf Size:381K _igbt

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SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: G E - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switchi

5.23. ixgn82n120c3h1.pdf Size:92K _igbt

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Advance Technical Information VCES = 1200V GenX3TM 1200V IXGN82N120C3H1 IC110 = 58A IGBT w/ Diode ≤ VCE(sat) ≤ ≤£ 3.9V ≤ ≤ High-Speed PT IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25°C to 150°C 1200 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V E

5.24. sgd02n120.pdf Size:374K _igbt

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 SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: G E - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

5.25. mmix1y82n120c3h1.pdf Size:240K _igbt

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Preliminary Technical Information 1200V XPTTM IGBT VCES = 1200V MMIX1Y82N120C3H1 GenX3TM w/ Diode IC110 = 36A ≤ ≤ VCE(sat) ≤ 3.4V ≤ ≤ (Electrically Isolated Tab) tfi(typ) = 93ns High-Speed IGBT C for 20-50 kHz Switching G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V

5.26. sgb02n120.pdf Size:429K _igbt

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 SGB02N120 Fast IGBT in NPT-technology C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: G E - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel switching capability • Qualified accordi

5.27. sgp02n120.pdf Size:374K _igbt

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 SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: G E - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

5.28. sgi02n120.pdf Size:374K _igbt

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 SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: G E - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

5.29. ixgk82n120b3.pdf Size:217K _igbt

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Advance Technical Information GenX3TM 1200V VCES = 1200V IXGK82N120B3 IC110 = 82A IGBTs IXGX82N120B3 ≤ ≤ VCE(sat) ≤ 3.20V ≤ ≤ High-Speed Low-Vsat PT IGBTs for 3 - 20 kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V C (TAB) E E VGES Continuous ±20 V VGEM Transient

5.30. ixgn82n120b3h1.pdf Size:189K _igbt

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Advance Technical Information VCES = 1200V GenX3TM 1200V IXGN82N120B3H1 IC110 = 64A IGBT w/ Diode ≤ VCE(sat) ≤ ≤£ 3.2V ≤ ≤ High-Speed Low-Vsat PT IGBT for 3-20 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25°C to 150°C 1200 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±

5.31. ixgh32n120a3.pdf Size:194K _igbt

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GenX3TM 1200V VCES = 1200V IXGH32N120A3 IGBTs IC110 = 32A IXGT32N120A3 ≤ VCE(sat) ≤ ≤ 2.35V ≤ ≤ Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 1200 V E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V C (Tab) VGES Continuous ±20 V TO-247 (IXGH) VGEM Transient ±30 V IC25 TC = 25°C 75

5.32. ixgh12n120a3.pdf Size:199K _igbt

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GenX3TM 1200V VCES = 1200V IXGA12N120A3 IGBTs IC90 = 12A IXGP12N120A3 ≤ ≤ VCE(sat) ≤ 3.0V ≤ ≤ IXGH12N120A3 High Surge Current TO-263 AA (IXGA) Ultra-Low Vsat PT IGBTs for up to 3kHz Switching G S D (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V G

5.33. ixyh82n120c3.pdf Size:428K _igbt_a

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N E W P R O D U C T B R I E F Efficiency Through Technology 1200V XPT™ IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW TO-247 IXYS Corporation expands its 1200V XPT™ IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica- tion

5.34. ixgp12n120a3.pdf Size:199K _igbt_a

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GenX3TM 1200V VCES = 1200V IXGA12N120A3 IGBTs IC90 = 12A IXGP12N120A3 ≤ ≤ VCE(sat) ≤ 3.0V ≤ ≤ IXGH12N120A3 High Surge Current TO-263 AA (IXGA) Ultra-Low Vsat PT IGBTs for up to 3kHz Switching G S D (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V G

5.35. ixgx82n120a3.pdf Size:179K _igbt_a

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Preliminary Technical Information GenX3TM 1200V VCES = 1200V IXGK82N120A3 IC110 = 82A IGBTs IXGX82N120A3 ≤ ≤ VCE(sat) ≤ 2.05V ≤ ≤ Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V G C Tab VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V E E VGES Continuous ±20 V VGEM Transient ±3

5.36. ixyn82n120c3.pdf Size:175K _igbt_a

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Preliminary Technical Information 1200V XPTTM IGBT VCES = 1200V IXYN82N120C3 GenX3TM IC110 = 66A ≤ ≤ VCE(sat) ≤ 3.2V ≤ ≤ tfi(typ) = 93ns High-Speed IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25°C to 175°C 1200 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 1200 V G VGES Continuous ±20 V VGEM Transien

5.37. ixyb82n120c3h1.pdf Size:428K _igbt_a

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N E W P R O D U C T B R I E F Efficiency Through Technology 1200V XPT™ IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW TO-247 IXYS Corporation expands its 1200V XPT™ IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica- tion

5.38. ixgy2n120.pdf Size:126K _igbt_a

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Preliminary Data Sheet VCES IC90 VCE(SAT) High Voltage IGBT IXGY 2N120 1200 V 2.0 A 3 V TO-252 AA (IXGY) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V G E VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V G = Gate C = Collector IC25 TC = 25°C 5 A E = Emitter TAB = Collector IC90 TC = 90°C 2 A ICM TC

5.39. ixgt32n120a3.pdf Size:194K _igbt_a

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GenX3TM 1200V VCES = 1200V IXGH32N120A3 IGBTs IC110 = 32A IXGT32N120A3 ≤ VCE(sat) ≤ ≤ 2.35V ≤ ≤ Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 1200 V E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V C (Tab) VGES Continuous ±20 V TO-247 (IXGH) VGEM Transient ±30 V IC25 TC = 25°C 75

5.40. ixgx82n120b3.pdf Size:217K _igbt_a

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Advance Technical Information GenX3TM 1200V VCES = 1200V IXGK82N120B3 IC110 = 82A IGBTs IXGX82N120B3 ≤ ≤ VCE(sat) ≤ 3.20V ≤ ≤ High-Speed Low-Vsat PT IGBTs for 3 - 20 kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V C (TAB) E E VGES Continuous ±20 V VGEM Transient

5.41. ixyn82n120c3h1.pdf Size:428K _igbt_a

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N E W P R O D U C T B R I E F Efficiency Through Technology 1200V XPT™ IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW TO-247 IXYS Corporation expands its 1200V XPT™ IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica- tion

5.42. kgt12n120ndh.pdf Size:1077K _igbt_a

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SEMICONDUCTOR KGT12N120NDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES ·High speed switching ·High system efficiency ·Soft current turn-off waveforms ·Extremely enhanced avalanche capability MAXIMUM RAT

5.43. ixgp12n120a2.pdf Size:575K _igbt_a

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IXGA 12N120A2 VCES = 1200 V IGBT IXGP 12N120A2 IC25 = 24 A Optimized for VCE(sat) = 3.0 V switching up to 5KHz Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V TO-220AB (IXGP) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V G C E IC25 TC = 25°C24 A IC90 TC = 90°C12 A ICM TC = 25°C, 1

Anderen transistoren... 2N1195 , 2N1196 , 2N1197 , 2N1198 , 2N1199 , 2N1199A , 2N120 , 2N1200 , TIP41C , 2N1202 , 2N1203 , 2N1204 , 2N1204A , 2N1205 , 2N1206 , 2N1207 , 2N1208 .

 


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