Alle Transistoren. 2SD2466 Datenblatt

 

2SD2466 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2SD2466

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Ptot): 40 W

Kollektor-Basis-Sperrspannung (Vcb): 40 V

Kollektor-Emitter-Sperrspannung (Vce): 20 V

Emitter-Basis-Sperrspannung (Veb): 5 V

Kollektorstrom (Ic): 10 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Transitfrequenz (ft): 120 MHz

Kollektor-Kapazität (Cc): 200 pF

Kurzschluss-Stromverstärkung (hfe): 90

Transistorgehäuse: TO-220E

Ersatz (vergleichstyp) für 2SD2466

 

2SD2466 Datasheet (PDF)

1.1. 2sd2466.pdf Size:54K _panasonic

2SD2466
2SD2466

Power Transistors 2SD2466, 2SD2466A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1604 Unit: mm Features 4.6 0.2 Low collector to emitter saturation voltage VCE(sat) 9.9 0.3 2.9 0.2 High-speed switching ? 3.2 0.1 Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw Absolute Maximum Ratings (TC

4.1. 2sd2461.pdf Size:183K _toshiba

2SD2466
2SD2466

2SD2461 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications Unit: mm High DC current gain: hFE (1) = 800 to 3200 (V = 5 V, I = 0.1 A) CE C Low saturation voltage: V = 0.3 V (typ.) (I = 0.5 A, I = 5 mA) CE (sat) C B Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage V

4.2. 2sd2462.pdf Size:184K _toshiba

2SD2466
2SD2466

2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit: mm High DC current gain: hFE (1) = 800 to 3200 (V = 5 V, I = 0.2 A) CE C Low saturation voltage: V = 0.4 V (typ.) (I = 1 A, I = 10 mA) CE (sat) C B Complementary to 2SB1602 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V

4.3. 2sd2463.pdf Size:82K _nec

2SD2466
2SD2466

DATA SHEET SILICON TRANSISTOR 2SD2463 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2463 is a Darlington connection transistor with on- PACKAGE DRAWING (UNIT: mm) chip dumper diode in collector to emitter and zener diode in collector to base. This transistor is ideal for use in acuator drives such as motors, relays, and solenoids. FEATU

4.4. 2sd2468.pdf Size:55K _panasonic

2SD2466
2SD2466

Power Transistors 2SD2468 Silicon NPN epitaxial planar type For power switching Unit: mm 4.6 0.2 9.9 0.3 2.9 0.2 Features ? 3.2 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be in- 2.6 0.1 stalled to the heat sink with one sc

4.5. 2sd2465.pdf Size:54K _panasonic

2SD2466
2SD2466

Power Transistors 2SD2465, 2SD2465A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1603 Unit: mm Features 4.6 0.2 Low collector to emitter saturation voltage VCE(sat) 9.9 0.3 2.9 0.2 ? 3.2 0.1 High-speed switching Full-pack package superior in insulation, which can be installed to the heat sink with one screw Absolute Maximum Ratings (TC=25?C)

4.6. 2sd2460 e.pdf Size:37K _panasonic

2SD2466
2SD2466

Transistor 2SD2460 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 20 V 1.27 1.27 Collec

4.7. 2sd2469.pdf Size:59K _panasonic

2SD2466
2SD2466

Power Transistors 2SD2469, 2SD2469A Silicon NPN epitaxial planar type For power switching Complementary to 2SB1607 Unit: mm Features 4.6 0.2 Low collector to emitter saturation voltage VCE(sat) 9.9 0.3 2.9 0.2 ? 3.2 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be in- stalled

4.8. 2sd2460.pdf Size:34K _panasonic

2SD2466
2SD2466

Transistor 2SD2460 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 20 V 1.27 1.27 Collec

4.9. 2sd2467.pdf Size:47K _panasonic

2SD2466
2SD2466

Power Transistors 2SD2467 Silicon NPN epitaxial planar type For power switching Unit: mm 4.6 0.2 9.9 0.3 2.9 0.2 Features ? 3.2 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be in- 2.6 0.1 stalled to the heat sink with one sc

Anderen transistoren... 2SD2441 , 2SD2444 , 2SD2453 , 2SD2457 , 2SD2459 , 2SD2460 , 2SD2465 , 2SD2465A , 2SC2078 , 2SD2466A , 2SD2467 , 2SD2468 , 2SD2469 , 2SD2469A , 2SD2478 , 2SD2479 , 2SD2486 .

 


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