Alle Transistoren. 2SD2530 Datenblatt

 

2SD2530 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2SD2530

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Ptot): 15 W

Kollektor-Basis-Sperrspannung (Vcb): 100 V

Kollektor-Emitter-Sperrspannung (Vce): 100 V

Emitter-Basis-Sperrspannung (Veb): 5 V

Kollektorstrom (Ic): 5 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Transitfrequenz (ft): 20 MHz

Kurzschluss-Stromverstärkung (hfe): 2000

Transistorgehäuse: MT-4

Ersatz (vergleichstyp) für 2SD2530

 

2SD2530 Datasheet (PDF)

1.1. 2sd2530.pdf Size:45K _panasonic

2SD2530

Power Transistors 2SD2530 Silicon NPN triple diffusion planer type Darlington Unit: mm For power amplification 10.00.2 5.00.1 1.00.2 Features High forward current transfer ratio hFE Allowing supply with the radial taping 1.20.1 C 1.0 Low collector to emitter saturation voltage VCE(sat): < 2.5 V 1.480.2 2.250.2 0.650.1 0.650.1 0.350.1 1.050.1 Absolute Maximum Ra

4.1. 2sd2536.pdf Size:71K _toshiba

2SD2530
2SD2530

2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2536 Switching Applications Unit: mm Micro Motor Drive, Hammer Drive Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.2 V (max) CE (sat) (I = 0.7 A, V = 4.2 V) C BH Zener diode included between collector and base. Maximum Rati

4.2. 2sd2539.pdf Size:276K _toshiba

2SD2530
2SD2530

2SD2539 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2539 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.3 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATIN

4.3. 2sd2531.pdf Size:178K _toshiba

2SD2530
2SD2530

4.4. 2sd2537.pdf Size:128K _rohm

2SD2530
2SD2530

Medium Power Transistor (25V, 1.2A) 2SD2537 ?Features ?Dimensions (Unit : mm) 1) High DC current gain. 2SD2537 2) High emitter-base voltage. (VEBO=12V) 4.5 1.5 1.6 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) (1) (2) (3) 0.4 0.5 ?Absolute maximum ratings (Ta=25C) 0.4 0.4 1.5 1.5 ROHM : MPT3 (1) Base Parameter Symbol Limits Unit 3.0 EIAJ : SC-62 (2

4.5. 2sd2538.pdf Size:45K _panasonic

2SD2530

Power Transistors 2SD2538 Silicon NPN triple diffusion planer type Darlington Unit: mm For power amplification 4.60.2 9.90.3 2.90.2 Features ? 3.20.1 High forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 1.40.2 2.60.1 1.60.2 Absolute Maximum Ratings TC = 25C 0.80.1 0.550.15 Parameter Symbol Rating Unit Coll

4.6. 2sd2539.pdf Size:136K _inchange_semiconductor

2SD2530
2SD2530

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2539 DESCRIPTION ·With TO-3P(H)IS package ·High voltage ;high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for color TV PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter Absolute maximum r

4.7. 2sd2531.pdf Size:54K _inchange_semiconductor

2SD2530
2SD2530

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2531 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 1.0 (Max)@ IC= 2.5A ·High Power Dissipation: PC= 25W@ TC= 25 APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO

4.8. 2sd2531.pdf Size:451K _blue-rocket-elect

2SD2530
2SD2530

2SD2531(BR3DA2531F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 饱和压降低,集电极耗散功率高。 Low collector saturation voltage, high power dissipation. 用途 / Applications 用于功率放大。 Power amplifier applications. 内部等效

4.9. 2sd2537.pdf Size:1066K _kexin

2SD2530
2SD2530

SMD Type Transistors NPN Transistors 2SD2537 1.70 0.1 ■ Features ● High DC current gain. ● High emitter-base voltage. ● Low saturation voltage. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 9 Col

Anderen transistoren... 2SD2478 , 2SD2479 , 2SD2486 , 2SD2491 , 2SD2492 , 2SD2504 , 2SD2527 , 2SD2528 , 2N3904 , 2SD2538 , 2SD2544 , 2SD2549 , 2SD2550 , 2SD2551 , 2SD2556 , 2SD2559 , 2SD2565 .

 


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