Alle Transistoren. 2SD2611 Datenblatt

 

2SD2611 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2SD2611

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Ptot): 30 W

Kollektor-Basis-Sperrspannung (Vcb): 100 V

Kollektor-Emitter-Sperrspannung (Vce): 80 V

Emitter-Basis-Sperrspannung (Veb): 5 V

Kollektorstrom (Ic): 7 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Transitfrequenz (ft): 5 MHz

Kollektor-Kapazität (Cc): 150 pF

Kurzschluss-Stromverstärkung (hfe): 60

Transistorgehäuse: TO-220FN

Ersatz (vergleichstyp) für 2SD2611

 

2SD2611 Datasheet (PDF)

1.1. 2sd2611.pdf Size:47K _rohm

2SD2611

2SD2611 Transistors Power Transistor (80V, 7A) 2SD2611 Features 1) Low saturation voltage, typically VCE(sat) = 0.3V at IC / IB =4 / 0.4A. 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672. Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 100 V Collector-emi

4.1. 2sd2618.pdf Size:46K _rohm

2SD2611

2SD2618 Transistors Power Transistor (80V, 4A) 2SD2618 Features Circuit diagram 1) Darlington connection for a high hFE. C 2) Built-in resistor between base and emitter. 3) Built-in damper doide. 4) Complements the 2SB1676. B R 300? R B : Base C : Collector E E : Emitter Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V Collect

4.2. 2sd2615.pdf Size:47K _rohm

2SD2611

2SD2615 Transistors Power Transistor (120V, 6A) 2SD2615 Features Circuit diagram 1) Darlington connection for high DC current gain. C 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1674. B R1 R2 E R1 5.0k? B : Base C : Collector R2 300? E : Emitter Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Collector-base vo

4.3. 2sd2614.pdf Size:53K _rohm

2SD2611

2SD2614 Transistors Medium Power Transistor (Motor, Relay drive) (6010V, 5A) 2SD2614 Features External dimensions (Units : mm) 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to 10.0 4.5 "L" loads. 3.2 2.8 ? 3) Built-in resistor between base and emitter. 4) Built-in damper diode. 1.2 1.3 0.8 0.75 ( ) 2.54 2.54 2.6 (1) Base

4.4. 2sd2616.pdf Size:45K _rohm

2SD2611

2SD2616 Transisitors Power Transistor (100V, 5A) 2SD2616 Features 1) Low saturation voltage, typically VCE(sat) = -0.3V at IC / IB=3A / 0.3A. 2) Excellent hFE current characteristics. 3) Pc=30W. (Tc=25C) Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V 5 A(DC) Collec

4.5. 2sd261.pdf Size:72K _usha

2SD2611
2SD2611

Transistors 2SD261

Anderen transistoren... 2SD2573 , 2SD2575 , 2SC6053 , 2SD2581 , 2SD2582 , 2SD2589 , 2SD2598 , 2SD2607 , S8550 , 2SD2620J , 2SD2621 , 2SD2623 , 2SD2627 , 2SD2635 , 2SD2638 , 2SD2639 , 2SD2645 .

 


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