Alle Transistoren. 2SD2648 Datenblatt

 

2SD2648 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2SD2648

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Ptot): 85 W

Kollektor-Basis-Sperrspannung (Vcb): 1500 V

Kollektor-Emitter-Sperrspannung (Vce): 700 V

Emitter-Basis-Sperrspannung (Veb): 5 V

Kollektorstrom (Ic): 15 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Kurzschluss-Stromverstärkung (hfe): 5

Transistorgehäuse: TO-3PMLH

Ersatz (vergleichstyp) für 2SD2648

 

2SD2648 Datasheet (PDF)

1.1. 2sd2648.pdf Size:28K _sanyo

2SD2648
2SD2648

Ordering number : ENN6923 2SD2648 NPN Triple Diffused Planar Silicon Transistor 2SD2648 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2648] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 : Base 5.45 2

4.1. 2sd2645.pdf Size:29K _sanyo

2SD2648
2SD2648

Ordering number : ENN6897A 2SD2645 NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2645] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode. 3.1 2.8 2.0 2.1 0.9 0

4.2. 2sd2646.pdf Size:29K _sanyo

2SD2648
2SD2648

Ordering number : ENN6922 2SD2646 NPN Triple Diffused Planar Silicon Transistor 2SD2646 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2646] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 : Base 5.45 2

4.3. 2sd2649.pdf Size:29K _sanyo

2SD2648
2SD2648

Ordering number : ENN6679A 2SD2649 NPN Triple Diffused Planar Silicon Transistor 2SD2649 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2649] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 : Base 2 : Coll

4.4. 2sd2641.pdf Size:28K _sanken-ele

2SD2648

Equivalent circuit C B Darlington 2SD2641 (70?) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685) Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P) Ratings Symbol Ratings Symbol Conditions Unit Unit 0.2 4.8 0.4 15.6 100max A VCBO 110 ICBO

4.5. 2sd2643.pdf Size:27K _sanken-ele

2SD2648

C Equivalent circuit B Darlington 2SD2643 (70?) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application : Audio, Series Regulator and General Purpose (Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions FM100(TO3PF) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 110 V VCB=

4.6. 2sd2642.pdf Size:28K _sanken-ele

2SD2648

C Equivalent circuit B Darlington 2SD2642 (70?) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 4.2 0.2 10.1 c0.5 VCBO 110 ICBO VCB=110

4.7. 2sd2645.pdf Size:232K _inchange_semiconductor

2SD2648
2SD2648

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2645 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V

4.8. 2sd2642.pdf Size:233K _inchange_semiconductor

2SD2648
2SD2648

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2642 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 5A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 5A, IBB= 5mA) ·Complement to Type 2SB1687 APPLICATIONS ·Designed for audio,

Anderen transistoren... 2SD2621 , 2SD2623 , 2SD2627 , 2SD2635 , 2SD2638 , 2SD2639 , 2SD2645 , 2SD2646 , TIP122 , 2SD2649 , 2SD2650 , 2SD2651 , 2SD2659 , 2SD2663 , 2SD2678 , 2SD2679 , 2SD2687S .

 


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