Alle Transistoren. FJN4311R Datenblatt

 

FJN4311R . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: FJN4311R

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Ptot): 0.3 W

Kollektor-Basis-Sperrspannung (Vcb): 40 V

Kollektor-Emitter-Sperrspannung (Vce): 40 V

Emitter-Basis-Sperrspannung (Veb): 5 V

Kollektorstrom (Ic): 0.1 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Transitfrequenz (ft): 200 MHz

Kollektor-Kapazität (Cc): 5.5 pF

Kurzschluss-Stromverstärkung (hfe): 100

Transistorgehäuse: TO-92

Ersatz (vergleichstyp) für FJN4311R

 

FJN4311R Datasheet (PDF)

1.1. fjn4311r.pdf Size:26K _fairchild_semi

FJN4311R
FJN4311R

FJN4311R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K?) Complement to FJN3311R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-Base Voltage

4.1. fjn4310r.pdf Size:32K _fairchild_semi

FJN4311R
FJN4311R

FJN4310R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K?) Complement to FJN3310R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Collector-Base Voltage

4.2. fjn4312r.pdf Size:26K _fairchild_semi

FJN4311R
FJN4311R

FJN4312R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47K?) Complement to FJN3312R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Collector-Base Voltage

4.3. fjn4314r.pdf Size:27K _fairchild_semi

FJN4311R
FJN4311R

FJN4314R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7K?, R2=47K?) Complement to FJN3314R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-B

4.4. fjn4313r.pdf Size:27K _fairchild_semi

FJN4311R
FJN4311R

FJN4313R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K?, R2=47K?) Complement to FJN3313R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-Ba

Anderen transistoren... FJN4303R , FJN4304R , FJN4305R , FJN4306R , FJN4307R , FJN4308R , FJN4309R , FJN4310R , MJE13003 , FJN4312R , FJN4313R , FJN4314R , FJN5471 , FJN965 , FJNS3201R , FJNS3202R , FJNS3203R .

 


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