Alle Transistoren. FJV4112R Datenblatt

 

FJV4112R . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: FJV4112R

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Ptot): 0.2 W

Kollektor-Basis-Sperrspannung (Vcb): 40 V

Kollektor-Emitter-Sperrspannung (Vce): 40 V

Emitter-Basis-Sperrspannung (Veb): 5 V

Kollektorstrom (Ic): 0.1 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Transitfrequenz (ft): 200 MHz

Kollektor-Kapazität (Cc): 5.5 pF

Kurzschluss-Stromverstärkung (hfe): 100

Transistorgehäuse: SOT-23

Ersatz (vergleichstyp) für FJV4112R

 

FJV4112R Datasheet (PDF)

1.1. fjv4112r.pdf Size:45K _fairchild_semi

FJV4112R
FJV4112R

FJV4112R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=47K?) Complement to FJV3112R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R R82 B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Unit

4.1. fjv4114r.pdf Size:46K _fairchild_semi

FJV4112R
FJV4112R

FJV4114R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1 =4.7K?, R2=47K?) Complement to FJV3114R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R84 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Pa

4.2. fjv4111r.pdf Size:45K _fairchild_semi

FJV4112R
FJV4112R

FJV4111R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=22K?) Complement to FJV3111R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R R81 B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Unit

4.3. fjv4110r.pdf Size:52K _fairchild_semi

FJV4112R
FJV4112R

FJV4110R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=10K?) Complement to FJV3110R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R R80 B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Unit

4.4. fjv4113r.pdf Size:46K _fairchild_semi

FJV4112R
FJV4112R

FJV4113R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=2.2K?, R2=47K?) Complement to FJV3113R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R83 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Par

Anderen transistoren... FJV4104R , FJV4105R , FJV4106R , FJV4107R , FJV4108R , FJV4109R , FJV4110R , FJV4111R , 2N2905 , FJV4113R , FJV4114R , FJV42MTF , FJV992 , FJX1182 , FJX2222A , FJX2907A , FJX3001R .

 


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