Alle Transistoren. 13003BS Datenblatt

 

13003BS . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 13003BS

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Ptot): 20 W

Kollektor-Basis-Sperrspannung (Vcb): 450 V

Kollektor-Emitter-Sperrspannung (Vce): 400 V

Emitter-Basis-Sperrspannung (Veb): 9 V

Kollektorstrom (Ic): 10 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Transitfrequenz (ft): 5 MHz

Kurzschluss-Stromverstärkung (hfe): 10

Transistorgehäuse: TO-251_TO-126_TO-92

Ersatz (vergleichstyp) für 13003BS

 

13003BS Datasheet (PDF)

1.1. 13003bs.pdf Size:165K _utc

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UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION ? DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 13003BS

4.1. sbr13003b1.pdf Size:327K _update

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SBR13003B1 SBR13003B1 SBR13003B1 SBR13003B1 High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA General Description G

4.2. sbu13003bd.pdf Size:162K _update

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SBU13003BD High Voltage Fast-Switching NPN Power Transistor Features symbol ■ Very High Switching Speed 2.Collector ■ High Voltage Capability 1.Base ■ Wide Reverse Bias SOA 3.Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Rat

4.3. sbr13003b.pdf Size:406K _update

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SBR13003B SBR13003B SBR13003B SBR13003B High Voltage Fast -Switching NPN Power Transistor Features � Very High Switching Speed � High Voltage Capability � Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Paramet

4.4. sbr13003bd.pdf Size:281K _update

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SBR13003BD SBR13003BD SBR13003BD SBR13003BD HighVoltageFast-SwitchingNPNPowerTransistor Features symbol symbol symbol symbol ■ Very High Switching Speed 2.Collector ■ High Voltage Capability 1.Base ■ Wide Reverse Bias SOA 3.Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switchin

4.5. bd13003b.pdf Size:765K _secos

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BD13003B 1.5A , 700V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 ? Power Switching Applications CLASSIFICATION OF ts Product-Rank BD13003B-A1 BD13003B-A2 A B Range 2-2.5 (?s) 2.5-3 (?s) E F Product-Rank BD13003B-B1 BD13003B-B2 C N H Range 3-3.5 (?s) 3.5-4 (?s)

4.6. 3dd13003b.pdf Size:2520K _secos

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3DD13003B 1.5A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Power switching applications A D Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 Collector E 0.36 0.56 2 E C F 0.36 0.51 F G 1.27 TYP. H 1.10 - J 2.42

4.7. ts13003b c07.pdf Size:399K _taiwansemi

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TS13003B High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram ? High Voltage ? High Speed Switching Structure ? Silicon Triple Diffused Type ? NPN Silicon Transistor Ordering Information Part No. Package Packing TS13003BCT B

4.8. ts13003bct.pdf Size:399K _taiwansemi

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TS13003B High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. Package Packing T

4.9. 3dd13003b.pdf Size:183K _lge

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3DD13003B(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 2. COLLECTOR 5.21 3. BASE 4.32 2.92 5.33 MIN Features power switching applications 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3.18 2.03 4.19 Symbol Parameter Value Units 2.67 1.14 VCBO Collector-Base Voltage 700 V 1.40 2.03 2.67 VCEO Collector-Emitter Voltage 400 V VEBO

4.10. 3dd13003b.pdf Size:140K _wietron

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WEITRON 3DD13003B NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES : • power switching applications TO-92 MAXIMUM RATINGS (T unless otherwise noted) A=25°C Parameter Symbol Value Units Collector-Base Voltage V VCBO 700 Collector-Emitter Voltage V VCEO 400 Emitter-Base Voltage 9 V VEBO A Collector Current -Continuous IC 1.5 Collec

4.11. mje13003b.pdf Size:178K _wietron

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WEITRON MJE13003B High Voltage Fast-switching COLLECTOR 2. NPN Power Transistor P b Lead(Pb)-Free 1. EMITTER 3. 2. COLLECTOR BASE 3. BASE DESCRIPTION: 1. The device is manufactured using high voltage EMITTER TO-92 Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhanc

4.12. mje13003br.pdf Size:385K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003BR NPN MJE /MJE SERIES TRANSISTORS MJE13003BR NPN MJE 系

4.13. mje13003b.pdf Size:206K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE 系列

4.14. mje13003brh.pdf Size:385K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJ

4.15. 13003b.pdf Size:116K _jdsemi

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R 13003B 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Fluorescent Lamp、Electronic Ballast、 and Switch-mode power supplies 2. 2. 2.F

4.16. mje13003b.pdf Size:77K _first_silicon

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SEMICONDUCTOR MJE13003B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS : ton=0.5μS(Max.), tf=0.7μS(Max.), at IC=1A A 4 70 MAX E K B 4 80 MAX High Collector Voltage : VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _ MA

Anderen transistoren... SUT562EF , SUT575EF , 4124 , 4126 , 4128 , 5302 , 13002AH , 13003ADA , S9013 , 13003DE , 13003DF , 13003DH , 13003DW , 13003EDA , 13005EC , 2SA1627A , 2SC5027E .

 


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