Alle Transistoren. 3DA1 Datenblatt

 

3DA1 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 3DA1

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Ptot): 7.5 W

Kollektor-Emitter-Sperrspannung (Vce): 30 V

Emitter-Basis-Sperrspannung (Veb): 4 V

Kollektorstrom (Ic): 0.75 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Transitfrequenz (ft): 10 MHz

Kurzschluss-Stromverstärkung (hfe): 15

Transistorgehäuse: TO3

Ersatz (vergleichstyp) für 3DA1

 

3DA1 Datasheet (PDF)

1.1. br3da122dk.pdf Size:611K _update

3DA1
3DA1

BLD122D(BR3DA122DK) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 耐压高,快速转换。 High Voltage Capability High Speed Switching. 用途 / Applications 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 High frequency elec

1.2. 3da14 3da27 3da28.pdf Size:32K _update

3DA1

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA14, 3DA27, 3DA28 NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for a

1.3. 2sc1846 3da1846.pdf Size:853K _update

3DA1
3DA1

2SC1846(3DA1846) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于中功率放大。 Purpose: Medium power amplifier. 特点:V 低,与 2SA885(3CA885)互补可得到 3W 输出。 CE(sat) Features: Low V ,3W output in complementary pair with 2SA885(3CA885). CE(sat) 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 45 V

1.4. 2sc1384 3da1384.pdf Size:193K _update

3DA1
3DA1

2SC1384(3DA1384) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于音频功率放大和驱动。 Purpose: AF power amplifier and driver applications. 特点:饱和压降低,与 2SA684(3CA684)互补可得 2~3 瓦输出。 Features: Low V ,2~3W output in complementary pair with 2SA684(3CA684). CE(sat) 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数

1.5. 3da10a.pdf Size:23K _update

3DA1

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA10A NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: QZJ840611 4. Use for analog computer power output, amplifica

1.6. 2sc1573-a 3da1573-a.pdf Size:198K _update

3DA1
3DA1

2SC1573(3DA1573) 2SC1573A(3DA1573A) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于普通放大及小屏幕电视机视放电路。 Purpose: General amplifier and video frequency output in small screen TV. 特点:耐压高,f 高,与 2SA879(3CA879)互补。 T Features: High V , high f ; Complementary pair with 2SA879(3CA879). CEO T 极限参数/Absolute maximum rati

1.7. tip122 3da122.pdf Size:567K _update

3DA1
3DA1

TIP122(3DA122) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于中功率线性开关放大。 Purpose: Medium power linear switching applications. 特点:与 TIP127(3CA127)互补。 Features: Complement to TIP127(3CA127). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 100 V CBO V 100 V CEO V 5.0 V EBO I

1.8. tip142t 3da142t.pdf Size:518K _update

3DA1
3DA1

TIP142T(3DA142T) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于工业仪器的线性开关转换。 Purpose: Linear and switching industrial equipment. 特点: 基极-发射极设有独立的电阻、直流增益高、与 TIP147T(3CA147T)配对。 Features: Monolithic construction with built in base-emitter shunt resistors、High DC current gain complement to TIP147T(

1.9. 3da150.pdf Size:24K _update

3DA1

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA150 NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog computer

1.10. 3da76 3da10a 3da96.pdf Size:31K _update

3DA1

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA76, 3DA10A, 3DA96 NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: QZJ840611. GJB33 A-97, QZJ840611A also for 3DA9

1.11. 3da100.pdf Size:134K _update

3DA1

3DA100 型 NPN 硅高频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E PCM TC=25℃ 100 W ICM 10 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 1.5 ℃/W IC=3A V(BR)CBO ICB=1mA ≥25 ≥50 ≥100 ≥150 ≥200 V V(BR)CEO ICE=1mA ≥25 ≥50 ≥100 ≥150 ≥200 V V(BR)EBO IEB=1mA ≥5.0 V ICBO VCB=20V ≤1.0 mA 直 ICEO VCE=20V

1.12. 3da101 3da102.pdf Size:29K _update

3DA1

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA101, 3DA102 NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog

1.13. 3da1 3da2 3da4.pdf Size:32K _update

3DA1

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA1, 3DA2, 3DA4 NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: GJB33 A-97. QZJ840611A, QZJ840611 only for 3DA1.

1.14. 2sc1383 3da1383.pdf Size:227K _update

3DA1
3DA1

2SC1383(3DA1383) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于音频功率放大和激励。/Purpose: Audio frequency power amplifier and driver. 特点:饱和电压低,可与 2SA683(3CA683)互补。/Features: Low V ,complementary pair CE(sat) with 2SA683(3CA683). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 30

1.15. 3da10.pdf Size:25K _update

3DA1

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA10 NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog computer

1.16. 2sc1360-a 3da1360-a.pdf Size:198K _update

3DA1
3DA1

2SC1360(3DA1360) 2SC1360A(3DA1360A) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于图像中频放大。 Purpose: Picture IF amplifier . 特点:特征频率高,集电极耗散功率大。 Features: High f , large P . T C 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit 2SC1360 50 V CBO V 2SC1360A 60 2SC1360

Anderen transistoren... 3DA2275A , 3DA2344 , 3DA340 , 3DA3417 , 3DA3420 , 3DA3421 , 3DA3422 , 3DA3502 , BD135 , 3DA2 , 3DA4 , 3DA10A , 3DA10B , 3DA10C , 3DA10D , 3DA10E , 3DA10F .

 


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